Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Pereiro Viterbo, Juan"'
We propose a general strategy for surface phase discrimination by dark-field imaging using low energy electrons, which maximizes contrast using diffraction spots, at selected optimal energies. The method can be automated to produce composite phase ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::fb85596e7349d8b306b48fdf30bd51d3
https://orca.cardiff.ac.uk/id/eprint/119750/1/1-s2.0-S0304399118304340-main.pdf
https://orca.cardiff.ac.uk/id/eprint/119750/1/1-s2.0-S0304399118304340-main.pdf
Publikováno v:
2231 – 0002
The concept of interface superconductivity was introduced over 50 years ago. Some of the greatest physicists of that time wondered whether a quasi-two-dimensional (2D) superconductor can actually exist, what are the peculiarities of 2D superconductiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::c48ce0c1514fc00e809ac3b760ecb36e
https://orca.cardiff.ac.uk/id/eprint/94223/1/1111.4194.pdf
https://orca.cardiff.ac.uk/id/eprint/94223/1/1111.4194.pdf
Autor:
Franssen, G., Gorczyca, l., Suski, T., Kamińska, A., Pereiro Viterbo, Juan, Muñoz Merino, Elias, Lliopoulus, E., Georgakilas, A., Che, S.B., Ishitani, Y., Yoshikawa, A., Christensen, N.E., Svane, A.
Publikováno v:
Journal of Applied Physics, ISSN 0021-8979, 2008-02, Vol. 103, No. 3
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
The hydrostatic pressure dependence of photoluminescence, dEPL/dp, of InxGa1−xN epilayers has been measured in the full composition range 0_x_1. Furthermore, ab initio calculations of the band gap pressure coefficient dEG/dp were performed. Both th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::989a3e73147e6b2f4ad3963494404453
http://oa.upm.es/2598/
http://oa.upm.es/2598/
Autor:
Bailey, L.R., King, P.D.C., Veal, T.D., McConville, Chris F., Pereiro Viterbo, Juan, Grandal Quintana, Javier, Sánchez García, Miguel Angel, Muñoz Merino, Elias, Calleja Pardo, Enrique
Publikováno v:
Journal of Applied Physics, ISSN 0021-8979, 2008-01, Vol. 104, No. 11
Archivo Digital UPM
Universidad Politécnica de Madrid
Archivo Digital UPM
Universidad Politécnica de Madrid
The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1−xN alloys with a composition range of 0.39 ≤ x ≤ 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a5216a07389baa7f8317f3900092020d
https://oa.upm.es/2548/
https://oa.upm.es/2548/