Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Perdicaro L."'
Autor:
La Via, F., Izzo, G., Mauceri, M., Pistone, G., Condorelli, G., Perdicaro, L., Abbondanza, G., Calcagno, L., Foti, G., Crippa, D.
Publikováno v:
In Journal of Crystal Growth 2008 311(1):107-113
Autor:
Perdicaro, L. M. S., Toro, R. G., Fragala', Maria Elena, Malandrino, Graziella, LO NIGRO, R., Bongiorno, C., Losurdo, M., Giangregorio, M. M., Bruno, G.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4731::04a45b6fc9712a14af1f79c2e6dda852
http://hdl.handle.net/20.500.11769/55883
http://hdl.handle.net/20.500.11769/55883
SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
Autor:
La Via F., Izzo G., Mauceri M., Pistone G., Condorelli G., Perdicaro L., Abbondanza G., Portuese F., Galvagno G., Di Franco S., Calcagno L., Foti G., Valente G.L., Crippa D.
Publikováno v:
Materials science forum 600-603 (2009): 123–126.
info:cnr-pdr/source/autori:La Via F., Izzo G., Mauceri M., Pistone G., Condorelli G., Perdicaro L., Abbondanza G., Portuese F., Galvagno G., Di Franco S., Calcagno L., Foti G., Valente G.L., Crippa D./titolo:SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate./doi:/rivista:Materials science forum/anno:2009/pagina_da:123/pagina_a:126/intervallo_pagine:123–126/volume:600-603
info:cnr-pdr/source/autori:La Via F., Izzo G., Mauceri M., Pistone G., Condorelli G., Perdicaro L., Abbondanza G., Portuese F., Galvagno G., Di Franco S., Calcagno L., Foti G., Valente G.L., Crippa D./titolo:SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate./doi:/rivista:Materials science forum/anno:2009/pagina_da:123/pagina_a:126/intervallo_pagine:123–126/volume:600-603
The growth rate of 4H-SiC epi layers has been increased up to 100 OEºm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::2f2108092783541972c4f90cca9cb382
https://publications.cnr.it/doc/220714
https://publications.cnr.it/doc/220714
Autor:
Malandrino, G., Borzì, A.M., Perdicaro, L., Fragalà, I.L., Andreone, A., Cassinese, A., Palomba, F., Pica, G.
Publikováno v:
In Physica C: Superconductivity and its applications 2000 341 Part 4:2677-2678
Publikováno v:
Chemical Vapor Deposition; Dec2006, Vol. 12 Issue 12, p736-741, 6p
Akademický článek
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Autor:
Hock, Rainer, Konias, Katja, Perdicaro, L., Magerl, Andreas, Hens, Philip, Wellmann, Peter J.
Publikováno v:
Materials Science Forum; April 2010, Vol. 645 Issue: 1 p29-32, 4p
Autor:
Malandrino, G., Perdicaro, L. M. S., Condorelli, G. G., Cassinese, A., Prigiobbo, A., Fragalà, I. L.
Publikováno v:
Chemical Vapor Deposition; September 2005, Vol. 11 Issue: 9 p381-387, 7p
Publikováno v:
Chemistry of Materials; February 2004, Vol. 16 Issue: 4 p608-613, 6p
Autor:
Giubileo, F., Jossa, A., Bobba, F., Akimenko, A. I., Malandrino, G., Perdicaro, L. M., Fragala, I. L., Cucolo, A. M.
Publikováno v:
Physica C: Superconductivity and its Applications; 2002, Vol. 367 Issue: 1-4 p170-173, 4p