Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Pepen Arifin"'
Autor:
Jessie Manopo, Tio Prince Lubis, Muhammad Arief Mustajab Enha Maryono, Pepen Arifin, Toto Winata, Rena Widita, Yudi Darma
Publikováno v:
RSC Advances. 13:14033-14040
High excitonic binding energy of pristine (LaO)MnAs and change from antiferromagnetic into ferrimagnetic due to F doping.
Autor:
Pepen Arifin, Sugianto, Agus Subagio, Heri Sutanto, Donny Dwiputra, Fenfen F. Florena, Aveni C. Keintjem, Rany Khaeroni
Publikováno v:
AIP Advances, Vol 10, Iss 4, Pp 045123-045123-7 (2020)
The growth of Mg-doped GaN thin films by metalorganic chemical vapor deposition (MOCVD) using NH3 and Cp2Mg as a source of nitrogen and Mg, respectively, usually produces Mg–H complexes, which hinder the activation of Mg as shallow acceptor centers
Externí odkaz:
https://doaj.org/article/de2a2e89ced547d3a1a68091f74a1408
Publikováno v:
AIP Advances, Vol 9, Iss 11, Pp 115304-115304-5 (2019)
The deposition of InGaN thin films by plasma-assisted metalorganic chemical vapor deposition is achieved using nitrogen plasma as a nitrogen source. The generation of nitrogen plasma is optimized using optical emission spectroscopy, and the plasma is
Externí odkaz:
https://doaj.org/article/249bb956541041cdbc77546b684ec467
Publikováno v:
Coatings; Volume 12; Issue 1; Pages: 94
Coatings, Vol 12, Iss 94, p 94 (2022)
Coatings, Vol 12, Iss 94, p 94 (2022)
We report the growth of non-polar GaN and AlGaN films on Si(111) substrates by plasma-assisted metal-organic chemical vapor deposition (PA-MOCVD). Low-temperature growth of GaN or AlN was used as a buffer layer to overcome the lattice mismatch and th
Autor:
Pepen Arifin, Idham Pribadi
Publikováno v:
Acoustical Science and Technology. 40:178-185
Publikováno v:
Journal of Mathematical and Fundamental Sciences, Vol 38, Iss 2 (2013)
The Ti1-xCoxO2 thin films have been grown by MOCVD technique using titanium (IV) isopropoxide (TTIP) and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) Cobalt (III) [Co(TMHD)3] powder precursors. The tetrahydrofuran (THF) were used as a solvent to ge
Externí odkaz:
https://doaj.org/article/864267de09f1471ebc0ad4abe847847c
Publikováno v:
Journal of Mathematical and Fundamental Sciences, Vol 37, Iss 2 (2013)
Ti1-xCoxO2 thin films have been deposited on Si substrate by MOCVD technique. Thin films were synthesized by a single plane orientation structure of anatase-213 at various to Co concentartions up to 5,77%. Photoluminescence emission spectra of thin f
Externí odkaz:
https://doaj.org/article/2762623886544e6ba9386d3fd4a20d2e
Autor:
Donny Dwiputra, Rany Khaeroni, Agus Subagio, Aveni C. Keintjem, Pepen Arifin, Heri Sutanto, Sugianto, Fenfen Fenda Florena
Publikováno v:
AIP Advances, Vol 10, Iss 4, Pp 045123-045123-7 (2020)
The growth of Mg-doped GaN thin films by metalorganic chemical vapor deposition (MOCVD) using NH3 and Cp2Mg as a source of nitrogen and Mg, respectively, usually produces Mg–H complexes, which hinder the activation of Mg as shallow acceptor centers
Publikováno v:
AIP Advances, Vol 9, Iss 11, Pp 115304-115304-5 (2019)
The deposition of InGaN thin films by plasma-assisted metalorganic chemical vapor deposition is achieved using nitrogen plasma as a nitrogen source. The generation of nitrogen plasma is optimized using optical emission spectroscopy, and the plasma is
Publikováno v:
Advanced Materials Research. 896:192-196
Co:TiO2 (cobalt-doped titanium dioxide) thin films have been deposited on the n-type Si (100) substrate at the temperatures range of 325°C 450°C using MOCVD (metal organic chemical vapor deposition) technique. We investigated the effect of growth t