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pro vyhledávání: '"Penumatcha Ashish Verma"'
Akademický článek
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Akademický článek
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Autor:
Carl H. Naylor, Chelsey Dorow, O'brien Kevin P, Kirby Maxey, Arnab Sen Gupta, Andy Hsiao, Tronic Tristan A, Penumatcha Ashish Verma, Scott B. Clendenning, Gosavi Tanay, Matthew V. Metz, Michael Christenson, Sudarat Lee, Robert L. Bristol, Uygar E. Avci, Alaan Urusa, A. A. Oni, Hui Zhu
Publikováno v:
IEEE Transactions on Electron Devices. 68:6592-6598
2-D-material channels enable ultimate scaling of MOSFET transistors and will help Moore's Law scaling for years. We demonstrate the state of both n- and p-MOSFETs using monolayer transition metal dichalcogenide (TMD) channels of sub-1 nm thickness an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d41c0f0bcfb98257799a5d37068b6f06
https://doi.org/10.1109/ted.2021.3118659
https://doi.org/10.1109/ted.2021.3118659
Autor:
Saptarshi Das, Thomas D. Anthopoulos, Tibor Grasser, Connor J. McClellan, Uygar E. Avci, Penumatcha Ashish Verma, Lain-Jong Li, Aaron D. Franklin, Wenjuan Zhu, Theresia Knobloch, Rajendra Singh, Joerg Appenzeller, Amritanand Sebastian, Navakanta Bhat, Eric Pop, Inge Asselberghs, Zhihong Chen, Yury Yu. Illarionov
Publikováno v:
Nature Electronics. 4:786-799
Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2efd31326d4bd302880953d648ed9a1c
https://doi.org/10.1038/s41928-021-00670-1
https://doi.org/10.1038/s41928-021-00670-1
Autor:
Zhihong Chen, Joerg Appenzeller, Penumatcha Ashish Verma, Vinh Quang Diep, Lin Chia-Ching, Supriyo Datta
Publikováno v:
IEEE Transactions on Magnetics. 52:1-7
The ability to control the magnetization of individual nanomagnets has made possible a broad class of devices, which store and manipulate information in the form of magnetization. For these devices to serve as building blocks for computation, they mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd866b828ac4b97118f6279a6495ac4d
https://doi.org/10.1109/tmag.2015.2474840
https://doi.org/10.1109/tmag.2015.2474840
Autor:
Jerry Tersoff, Qing Cao, Penumatcha Ashish Verma, George S. Tulevski, Martin M. Frank, Shu-Jen Han, Wilfried Haensch
Publikováno v:
ACS Nano. 9:1936-1944
Ultrascaled transistors based on single-walled carbon nanotubes are identified as one of the top candidates for future microprocessor chips as they provide significantly better device performance and scaling properties than conventional silicon techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23cf5c45caef1873045f5c9b552003d0
https://doi.org/10.1021/nn506839p
https://doi.org/10.1021/nn506839p
Autor:
Penumatcha, Ashish Verma
Publikováno v:
Open Access Dissertations
Since the late 1980s, several key discoveries, such as Giant and Tunneling Magne- toresistance, and advances in magnetic materials have paved the way for exponentially higher bit-densities in magnetic storage. In particular, the discovery of Spin-Tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::d1f91b425475571b26ea81c977cd4f66
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=2201&context=open_access_dissertations
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=2201&context=open_access_dissertations
Publikováno v:
IEEE Transactions on Electron Devices. 60:923-926
We discuss the limitations of the high-low CV technique in evaluating the interface trap density (DIT) in MOS samples with a large time constant dispersion, as occurs in silicon carbide (SiC). We show that the high-low technique can seriously underes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1ab4c205e3bfb00e3ba305845fac6ea
https://doi.org/10.1109/ted.2013.2237777
https://doi.org/10.1109/ted.2013.2237777
Publikováno v:
Journal of Applied Physics. 122:213905
Spin-Orbit Torque (SOT) in Heavy Metal/Ferromagnet (HM/FM) structures provides an important tool to control the magnetization of FMs and has been an area of interest for memory and logic implementation. Spin transfer torque on the FM in such structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::581cc81eb173928dc269c1ceb628b220
https://doi.org/10.1063/1.4994711
https://doi.org/10.1063/1.4994711
Publikováno v:
Nature Communications
Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::340a8cf95ae6f9107560262917d64ad7
http://europepmc.org/articles/PMC4660372
http://europepmc.org/articles/PMC4660372