Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Pentti Niiranen"'
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract Semiconductor devices are constructed from stacks of materials with different electrical properties, making deposition of thin layers central in producing semiconductor chips. The shrinking of electronics has resulted in complex device archi
Externí odkaz:
https://doaj.org/article/95c9654ae39a43578d6144a3cda0b6b7
Autor:
Rouzbeh Samii, Anton Fransson, Pamburayi Mpofu, Pentti Niiranen, Lars Ojamäe, Vadim Kessler, Nathan J. O’Brien
Publikováno v:
Inorganic Chemistry. 61:20804-20813
Group 11 thin films are desirable as interconnects in microelectronics. Although many M-N-bonded Cu precursors have been explored for vapor deposition, there is currently a lack of suitable Ag and Au derivatives. Herein, we present monovalent Cu, Ag,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b94e208ef9eb02706591ed9d54372248
https://doi.org/10.1021/acs.inorgchem.2c03071
https://doi.org/10.1021/acs.inorgchem.2c03071
Autor:
Pentti Niiranen, Hama Nadhom, Michal Zanaska, Robert Boyd, Mauricio Sortica, Daniel Primetzhofer, Daniel Lundin, Henrik Pedersen
In a recently presented chemical vapor deposition (CVD) method, plasma electrons are used as reducing agents for deposition of metals. The plasma electrons are attracted to the substrate surface by a positive substrate bias. Here, we present how a st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd5665d368faceaa45e73f78d244bd04
https://doi.org/10.26434/chemrxiv-2022-rgqfx
https://doi.org/10.26434/chemrxiv-2022-rgqfx
