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Laser induced heating of Si nanocrystals

Autor: Gibilisco S, Faraci G, Pennisi AR, Irrera A

Publikováno v: Journal of non-crystalline solids 356 (2010): 1948–1950.
info:cnr-pdr/source/autori:Gibilisco S, Faraci G, Pennisi AR, Irrera A/titolo:Laser induced heating of Si nanocrystals/doi:/rivista:Journal of non-crystalline solids/anno:2010/pagina_da:1948/pagina_a:1950/intervallo_pagine:1948–1950/volume:356

Si nanocrystals were synthesized and deposited on HOPG substrates. Using micro-Raman spectroscopy, we demonstrate that significant laser heating may be induced on Si nanocrystals, leading to an increase in the local temperature. As a consequence, the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::2fee5878cea6d21d9ae47b61e755f535
http://www.cnr.it/prodotto/i/36759

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Local order and crystallization of laser quenched and ion implanted amorphous Ge1-xTex thin films

Autor: Carria E, Mio AM, Miritello M, Gibilisco S, De Bastiani R, Pennisi AR, Bongiorno C, Grimaldi MG, Rimini E

Publikováno v: MRS Spring Meeting: Symposium H: Phase-Change Materials for Memory and Reconfigurable Electronics Applications, San Francisco (USA), 2010
info:cnr-pdr/source/autori:Carria E, De Bastiani R, Gibilisco S, Mio AM, Miritello M, Pennisi AR, Bongiorno C, Grimaldi MG, Rimini E/congresso_nome:MRS Spring Meeting: Symposium H: Phase-Change Materials for Memory and Reconfigurable Electronics Applications/congresso_luogo:San Francisco (USA)/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
Electrochemical and solid-state letters 13 (2010): II317–II320.
info:cnr-pdr/source/autori:Carria E, Mio AM, Miritello M, Gibilisco S, De Bastiani R, Pennisi AR, Bongiorno C, Grimaldi MG, Rimini E/titolo:Local Order and Crystallization of Laser Quenched and Ion Implanted Amorphous Ge1-xTex Thin Films/doi:/rivista:Electrochemical and solid-state letters/anno:2010/pagina_da:II317/pagina_a:II320/intervallo_pagine:II317–II320/volume:13

Amorphous films of Ge1-xTex (x = 0.37 and 0.64) prepared by sputtering, melt quenching, or ion irradiation were annealed up to 450 degrees C. The crystallized films consist of stoichiometric GeTe and precipitates of the excess element. The laser and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::117ce5b1d9a5c85994cb81f827631eb1
http://www.cnr.it/prodotto/i/86994

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