Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Pengying Chang"'
Autor:
Fang Cao, Xupeng Zhao, Xiaoqing Lv, Liangchen Hu, Wenhui Jiang, Feng Yang, Li Chi, Pengying Chang, Chen Xu, Yiyang Xie
Publikováno v:
Nanomaterials, Vol 12, Iss 15, p 2607 (2022)
The work introduces a localized surface plasmon resonance (LSPR) sensor chip integrated with vertical-cavity surface-emitting lasers (VCSELs). Using VCSEL as the light source, the hexagonal gold nanoparticle array was integrated with anodic aluminum
Externí odkaz:
https://doaj.org/article/bc904abc1b1c43528b354483858e302b
Publikováno v:
Micromachines, Vol 9, Iss 12, p 674 (2018)
This work focuses on the effect of remote phonon arising from the substrate and high-κ gate dielectric on electron mobility in two-dimensional (2D) InSe field-effect transistors (FETs). The electrostatic characteristic under quantum confinement is d
Externí odkaz:
https://doaj.org/article/459cc90891f2499bb73a6fa1fdcbeeaf
Autor:
Chengcheng Huang, Lanju Liang, Pengying Chang, Haiyun Yao, Xin Yan, Yonggang Zhang, Yiyang Xie
Publikováno v:
Advanced Materials; 3/14/2024, Vol. 36 Issue 11, p1-10, 20p
Autor:
Pengying Chang, Yiyang Xie
Publikováno v:
IEEE Transactions on Electron Devices. 70:2282-2290
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::553a741bbc6d0227d7e578366d79f492
https://doi.org/10.1109/ted.2023.3251958
https://doi.org/10.1109/ted.2023.3251958
Autor:
Pengying Chang, Yiyang Xie
Publikováno v:
IEEE Electron Device Letters. 44:168-171
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67bebe06777c7c13908971fa46ff6b20
https://doi.org/10.1109/led.2022.3225298
https://doi.org/10.1109/led.2022.3225298
Autor:
Fengsong Qian, Jun Deng, Yibo Dong, Chen Xu, Liangchen Hu, Guosheng Fu, Pengying Chang, Yiyang Xie, Jie Sun
Publikováno v:
ACS Applied Materials & Interfaces. 14:53174-53182
Direct chemical vapor deposition of graphene on semiconductors and insulators provides high feasibility for integration of graphene devices and semiconductor electronics. However, the current methods typically rely on high temperatures (1000 °C), wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::625469c41194c3b30492c1b06ad2a147
https://doi.org/10.1021/acsami.2c16505
https://doi.org/10.1021/acsami.2c16505
Autor:
Liangchen Hu, Yibo Dong, Yiyang Xie, Fengsong Qian, Pengying Chang, Mengqi Fan, Jun Deng, Chen Xu
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany).
The use of metal foil catalysts in the chemical vapor deposition of graphene films makes graphene transfer an ineluctable part of graphene device fabrication, which greatly limits industrialization. Here, an oxide phase-change material (V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::faac7837245ba8f23d85360194509c28
https://pubmed.ncbi.nlm.nih.gov/36592430
https://pubmed.ncbi.nlm.nih.gov/36592430
Autor:
Fengsong Qian, Jun Deng, Chen Xu, Yibo Dong, Liangchen Hu, Guosheng Fu, Yiyang Xie, Pengying Chang, Jie Sun
Publikováno v:
Optics express. 30(21)
Graphene has unique advantages in ultrabroadband detection. However, nowadays graphene-based photodetectors cannot meet the requirements for practical applications due to their poor performance. Here, we report a graphene−silicon−graphene Schottk
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b9f1b2837536115cec5b3f7c402bc78
https://pubmed.ncbi.nlm.nih.gov/36258414
https://pubmed.ncbi.nlm.nih.gov/36258414
Publikováno v:
Second International Conference on Optics and Image Processing (ICOIP 2022).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b1003b15e3e17547bbd05c4c901046f
https://doi.org/10.1117/12.2644181
https://doi.org/10.1117/12.2644181
Publikováno v:
IEEE Transactions on Electron Devices. 68:3526-3531
Tunneling processes of ferroelectric tunnel junction (FTJ) based on metal-ferroelectric-insulator-semiconductor (MFIS) stack are studied for both n- and p-type semiconductor electrodes using experimentally calibrated model. In the model, the calculat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5747fe78bccd7a0b6f6a901634ce4854
https://doi.org/10.1109/ted.2021.3079881
https://doi.org/10.1109/ted.2021.3079881