Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Pengyan Wen"'
Autor:
Pengyan Wen, Preksha Tiwari, Svenja Mauthe, Heinz Schmid, Marilyne Sousa, Markus Scherrer, Michael Baumann, Bertold Ian Bitachon, Juerg Leuthold, Bernd Gotsmann, Kirsten E. Moselund
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-11 (2022)
To realize on-chip optical communication schemes based on silicon, the integration of waveguides onto III-V devices must be achieved. Here, the authors report waveguide-coupled III-V heterostructure photodiodes monolithically integrated on silicon wa
Externí odkaz:
https://doaj.org/article/f45527129cc44c06a14be2f78a4439a3
Autor:
Pengyan Wen, Preksha Tiwari, Markus Scherrer, Emanuel Lörtscher, Kirsten E. Moselund, Bernd Gotsmann
Publikováno v:
2022 Asia Communications and Photonics Conference (ACP).
Publikováno v:
Optics & Laser Technology. 157:108662
Autor:
Jianping Liu, Hui Yang, Aiqin Tian, Deyao Li, Renlin Zhou, Wei Zhou, Masao Ikeda, Pengyan Wen, Shuming Zhang, Huixin Xiu, Feng Zhang, Liqun Zhang
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 25:1-5
Degradation of GaN-based laser diodes (LDs) is studied using Electroluminescence (EL) and Transmission Electron Microscopy (TEM). The slope efficiency decrease is observed in addition to threshold current increase. Further studies on the optical loss
Autor:
Pengyan Wen, Preksha Tiwari, Markus Scherrer, Emanuel Lörtscher, Bernd Gotsmann, Kirsten E. Moselund
Publikováno v:
ACS Photonics
There is a general trend of downscaling laser cavities, but with high integration and energy densities of nanocavity lasers, signifi-cant thermal issues affect their operation. The complexity of geometrical parameters and the various materials involv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08a2b3c17e9c40d171e304ec1bf7c7b2
http://arxiv.org/abs/2112.06257
http://arxiv.org/abs/2112.06257
Autor:
Preksha Tiwari, Pengyan Wen, Caimi, Daniele, Mauthe, Svenja, Trivino, Noelia Vico, Sousa, Marilyne, Moselund, Kirsten
Supplemental Document with Author List and without highlighted text.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6136c0e0e7f120b40f63dd839b7aa00c
Butt-Coupled III-V Photodetector Monolithically Integrated on SOI with data reception at 50 Gbps OOK
Autor:
Preksha Tiwari, Juerg Leuthold, Bertold Ian Bitachon, Svenja Mauthe, Heinz Schmid, Pengyan Wen, Kirsten E. Moselund, Michael Baumann
Publikováno v:
Optical Fiber Communication Conference (OFC) 2021
OFC
OFC
We demonstrate the first in-plane waveguide butt-coupled high-speed III-V p-i-n photodetector monolithically integrated on standard SOI and demonstrate data reception at 50 GBd using OOK and a 3 dB cut-off frequency approaching 70 GHz.
Autor:
Daniele Caimi, Noelia Vico Triviño, Pengyan Wen, Marilyne Sousa, Kirsten E. Moselund, Preksha Tiwari, Svenja Mauthe
Publikováno v:
Optics Express
A key component for optical on-chip communication is an efficient light source. However, to enable low energy per bit communication and local integration with Si CMOS, devices need to be further scaled down. In this work, we fabricate micro- and nano
Publikováno v:
IEEE 17th International Conference on Group IV Photonics (GFP)
2021 IEEE 17th International Conference on Group IV Photonics (GFP)
2021 IEEE 17th International Conference on Group IV Photonics (GFP)
Autor:
Pengyan Wen, Preksha Tiwari, Svenja Mauthe, Heinz Schmid, Marilyne Sousa, Markus Scherrer, Michael Baumann, Bertold Ian Bitachon, Juerg Leuthold, Bernd Gotsmann, Kirsten E. Moselund
Publikováno v:
Nature Communications, 13
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbb9f7a321a5c24673e5fb5d65d7b52b