Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Pengpeng Ren"'
Autor:
Zhiwei Liu, Puyang Cai, Songhai Yu, Linxin Han, Runsheng Wang, Yanqing Wu, Pengpeng Ren, Zhigang Ji, Ru Huang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 735-740 (2021)
Increasing demands for mass storage and new paradigm computing ask for non-volatile memories that can meet reliability requirements. Hf0.5Zr0.5O2-based (HZO) memory has attracted growing attention due to its excellent CMOS compatibility. This letter
Externí odkaz:
https://doaj.org/article/430902d35c67471d9662a8b843c43c74
Publikováno v:
IEEE Access, Vol 9, Pp 168648-168655 (2021)
In-memory computing is one of the best ways to solve the delay and power consumption issues of traditional von Neumann structures in the current Internet of Things and big data era. The realization of in-memory computing based on memristors is being
Externí odkaz:
https://doaj.org/article/fe1781e1b5ff432f83a1f5e54b96bcea
Autor:
Pengpeng Ren, Wenfei Zhang, Yiqun Ni, Di Xiao, Honghao Wan, Ya-Pei Peng, Ling Li, Peiguang Yan, Shuangchen Ruan
Publikováno v:
Nanomaterials, Vol 8, Iss 7, p 538 (2018)
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) quantum dots (QDs) are the vanguard due to their unique properties. In this work, WSe2 QDs were fabricated via one step ultrasonic probe sonication. Excitation wavelength dependent photolu
Externí odkaz:
https://doaj.org/article/bc38b3d412f64b50a6e6e35867a167ac
Autor:
Ya-Pei Peng, Wei Lu, Pengpeng Ren, Yiquan Ni, Yunfeng Wang, Peiguang Yan, Yu-Jia Zeng, Wenfei Zhang, Shuangchen Ruan
Publikováno v:
Nanomaterials, Vol 8, Iss 7, p 497 (2018)
Random lasers have attracted great interests and extensively investigation owing to their promising applications. Here, we explored unambiguously the multi-band up-converted random lasing from NaYF4:Yb,Er nanocrystals (NCs). NaYF4:Yb,Er NCs exhibit h
Externí odkaz:
https://doaj.org/article/6211bcf867524547bc6ecd87f91fe918
Autor:
Da Wang, Longda Zhou, Yongkang Xue, Pengpeng Ren, Zixuan Sun, Zirui Wang, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Ru Huang
Publikováno v:
IEEE Electron Device Letters. 44:939-942
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::748b91d15319fbb46e3856d17f91b216
https://doi.org/10.1109/led.2023.3266361
https://doi.org/10.1109/led.2023.3266361
Autor:
Xiang Liu, Pengpeng Ren, Haibao Chen, Zhigang Ji, Junhua Liu, Runsheng Wang, Jianfu Zhang, Ru Huang
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 42:1346-1350
With the ever-increasing transistor density and memory capability in integrated circuits, the high-sigma yield estimation has become a growing concern. This work presents an equiprobability-based local response surface method (ELRS) that can perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b0e264e49552f1568f065faeeb79ab1
https://doi.org/10.1109/tcad.2022.3193875
https://doi.org/10.1109/tcad.2022.3193875
Autor:
Da Wang, Longda Zhou, Yongkang Xue, Pengpeng Ren, Lining Zhang, Xiong Li, Xiangli Liu, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Kanyu Cao, Ru Huang
Publikováno v:
IEEE Transactions on Electron Devices. 69:6669-6675
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0a7de0bed92a2a375ce011565a4bc66
https://doi.org/10.1109/ted.2022.3211492
https://doi.org/10.1109/ted.2022.3211492
Publikováno v:
Medicine; 12/1/2023, Vol. 102 Issue 48, p1-6, 6p
Publikováno v:
Evidence-Based Complementary and Alternative Medicine. 2022:1-10
Targeting the phosphatidylinositol-3 kinase/protein kinase B/mammalian target of rapamycin (PI3K/Akt/mTOR) signalling pathway is a promising strategy for the treatment of various cancers, including bladder cancer (BC). PF-04691502 is a relatively nov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c3a81784b7103be534399f12c598948
https://doi.org/10.1155/2022/8110796
https://doi.org/10.1155/2022/8110796
Autor:
Runsheng Wang, Zixuan Sun, Yu Li, Yongkang Xue, Zirui Wang, Pengpeng Ren, Zhigang Ji, Lining Zhang, Ru Huang
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c4bef6c93b2b97d8f3f13ceaf796269
https://doi.org/10.1109/edtm55494.2023.10103061
https://doi.org/10.1109/edtm55494.2023.10103061