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pro vyhledávání: '"Peng-Lin Kuo"'
Publikováno v:
Polymers; Volume 15; Issue 11; Pages: 2421
In this study, a high-K material, aluminum oxide (AlOx), as the dielectric of organic field-effect transistors (OFETs) was used to reduce the threshold and operating voltages, while focusing on achieving high-electrical-stability OFETs and retention
Autor:
Fu Ching Tang, Horng Long Cheng, Peng-Lin Kuo, Po-Hsiang Fang, Sheng-Kuang Peng, Wei Yang Chou
Publikováno v:
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Organic thin-film transistor (OTFT) devices with polyimide (PI) layers of various solid contents were fabricated. In OTFT devices, the factor of interface between modification and active layers exhibits profound correlation with electrical stability