Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Peng-Fu Hsu"'
Autor:
Peng Fu Hsu, Yong Tian Hou, Jing-Chyi Liao, Chih I. Yang, Kuo Tai Huang, Tzu Liang Lee, Yuen Shun Chao, Wei Hsiung Tseng, Yean-Kuen Fang, Kang Cheng Lin, Meng Sung Liang
Publikováno v:
Japanese Journal of Applied Physics. 47:2616-2620
The impact of the Zr/Hf ratio on the reliability of a HfZrOX gate dielectric has been investigated in detail. By a frequency-varied charge-pumping method, we found that the density of bulk traps is reduced with increasing Zr content. Also, a comparab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a140f9a906cb8b552e8792000c3b5e30
https://doi.org/10.1143/jjap.47.2616
https://doi.org/10.1143/jjap.47.2616
Autor:
Peng-Soon Lim, Liang-Gi Yao, Syun-Ming Jang, Y. Jin, Vincent S. Chang, S.-C. Chen, H.J. Tao, Fong-Yu Yen, Yong-Tian Hou, Mong-Song Liang, H.J. Lin, Chi Chun Chen, Peng-Fu Hsu, C.L. Hung, Jian-Yong Jiang
Publikováno v:
ECS Transactions. 1:113-123
A semi-empirical, stacked capacitor model was developed to calculate the dielectric constants (k) and deposition rates of hafnium silicate (HfSiO) deposited by nano-laminated atomic layer deposition (NL-ALD) from the HfO2 and SiO2 ALD cycles (m and n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78db6fafa7ddcb96b821044b353639e3
https://doi.org/10.1149/1.2209336
https://doi.org/10.1149/1.2209336
Autor:
Matthew Beach, Raymond Hung, Miao Jin, Keping Han, Daxin Mao, Shiyu Sun, Xinliang Lu, S. Hassan, Peng-Fu Hsu, Yu Lei, Anup Phatak, Adam Brand, Naomi Yoshida, Hao Chen, Kun Xu, Srinivas Gandikota, Jing Zhou, Atif Noori, Wei Tang, Chorng-Ping Chang
Publikováno v:
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
This paper describes a novel scheme of metal gate integration to achieve precise threshold voltage (VTH) control and multiple VTH, by using metal composition and ion implantation (I/I) into work function metal (WFM). Moreover, WFM full fill is demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::835fdf737360372728425f4579ffaa81
https://doi.org/10.1109/vlsi-tsa.2014.6839647
https://doi.org/10.1109/vlsi-tsa.2014.6839647
Publikováno v:
Journal of Physics and Chemistry of Solids. 62:1871-1879
Titanium catecholate complex H2Ti(cat)3 (1) is synthesized from the direct reaction of Ti(OiPr)4 with catechol (H2cat). Treatment of 1 with NEt3 gives ionic complex (HNEt3)2[Ti(cat)3] (2). Reactions of 1 with SrCO3 or with BaCO3 afford the correspond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e4893fbefa7c416ebc1bfe07be3800
https://doi.org/10.1016/s0022-3697(01)00119-6
https://doi.org/10.1016/s0022-3697(01)00119-6
Autor:
Chi-Young Lee, Yun Chi, Peng-Fu Hsu, Wen-Cheng Tseng, Shie-Ming Peng, Gene-Hsiang Lee, Yeng-Lien Tung
Publikováno v:
Organometallics. 18:864-869
Treatment of β-ketoiminates with [(allyl)Pd(μ-Cl)]2 affords volatile, air-stable allyl(β-ketoiminato)palladium(II) complexes. The structure of [(methallyl)Pd(Phacac)] (Phacac = MeCOCHCMeNPh) was determined by single-crystal X-ray diffraction. In s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4838a41f01a2acbb67a6c955e3d15cfa
https://doi.org/10.1021/om980728c
https://doi.org/10.1021/om980728c
Publikováno v:
2013 13th International Workshop on Junction Technology (IWJT).
FinFET has emerged as a device structure to enable the device scaling at and beyond the 22nm technology node due to increasingly stringent demands for maximum device speed, lower leakage current and control of random dopant fluctuation effects. High-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c64cbf36f4663ac1f85b1fe777f53bfb
https://doi.org/10.1109/iwjt.2013.6644516
https://doi.org/10.1109/iwjt.2013.6644516
Autor:
Chao-Shiuan Liu, Shie-Ming Peng, Peng-Fu Hsu, Yun Chi, Tsung-Yi Chou, Gene-Hsiang Lee, Feng-Jen Lee
Publikováno v:
Chemical Vapor Deposition. 7:99-101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9ceec11dbbe44886b62187332be0ccb
https://doi.org/10.1002/1521-3862(200105)7:3<99::aid-cvde99>3.0.co
https://doi.org/10.1002/1521-3862(200105)7:3<99::aid-cvde99>3.0.co
Autor:
Kang-Cheng Lin, J.C. Liao, Y.T. Hou, Y.K. Fang, Mong-Song Liang, Tze-Liang Lee, Kwo-Shu Huang, Peng-Fu Hsu, C.L. Hung
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
In Hf-based stacks with TaC and MoNx dual metal gates, PBTI is found to be a concern. Although HfSiON reduces PBTI, worse NBTI by nitridation poses a potential issue. NBTI is also degraded by channel strain. A new pulse BTI technique is presented for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d8d4a5c238505590b26ed5b0bca4545
https://doi.org/10.1109/relphy.2007.369982
https://doi.org/10.1109/relphy.2007.369982
Autor:
K.T. Huang, Mong-Song Liang, Tze-Liang Lee, J.C. Liao, Peng-Fu Hsu, Yong-Tian Hou, Kang-Cheng Lin, C.L. Hung, Yean-Kuen Fang
Publikováno v:
2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
This paper reports the BTI reliability of dual metal gate CMOSFETs with Hf-based dielectrics including HfO2 and HfSiON. Severer PBTI degradation was observed on HfO2 NMOSFETs and two NBTI degradation behaviors were observed on HfO2 pMOSFET. The strai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21826040bdcb1949d7827b73f3b83e74
https://doi.org/10.1109/vtsa.2007.378908
https://doi.org/10.1109/vtsa.2007.378908
Autor:
Fu-Jye Liang, Kuang-Hsin Chen, Carlos H. Diaz, Chun-Kuang Chen, Jaw-Jung Shin, Chii-Ming Wu, Lin-Hung Shiu, Chenming Hu, Li-Wei Kung, Ping-Wei Wang, Chang-Yun Chang, Cheng-Chuan Huang, Chiu-Lien Lee, Bor-Wen Chan, King-Chang Shu, Tsai-Sheng Gau, Samuel Fung, Chang-Ta Yang, J.Y.-C. Sun, Cheng-Kuo Wen, Hou-Yu Chen, Peng-Fu Hsu, M.S. Liang, Burn-Jeng Lin, Jyu-Honig Shieh, Yee-Chaung See, Jan-Wen You, Fu-Liang Yang, Chien-Chao Huang, Hung-Wei Chen, Di-Hong Lee, Tang-Xuan Chung, Shui-Ming Cheng, Sheng-Da Liu, Bin-Chang Chang, Yu-Jun Chou
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
The first 45nm node planar-SOI technology has been developed with 6T-SRAM cell of 0.296 /spl mu/m/sup 2/. An adequate static noise margin of 120mV is obtained even at 0.6V operation. Fine patterning with line pitch of 130nm and contact pitch of 140nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c63f77d8d1817a120f09384733d85752
https://doi.org/10.1109/vlsit.2004.1345362
https://doi.org/10.1109/vlsit.2004.1345362