Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Peng Hsiang Weng"'
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 18:1629-1635
In this paper, we have investigated the mode patterns in real space and reciprocal space, and threshold gain at different band edges in GaN-based photonic crystal surface-emitting lasers (PCSELs) by using the multiple-scattering method. The character
Publikováno v:
Conference on Lasers and Electro-Optics 2012.
The GaN-based Photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and investigated. The characteristics for PCSELs with different central defects were calculated and matched well with experimental results.
Publikováno v:
Optics letters. 36(10)
We have analyzed threshold gains and lasing modes in GaN-based photonic crystal (PC) surface emitting lasers (PCSELs) by using the multiple scattering method (MSM) for triangular-lattice PC patterns. Moreover, GaN-based PCSELs with different boundary
Autor:
Fu Jen Kao, Peng-Hsiang Weng
Publikováno v:
The Second Asian and Pacific Rim Symposium on Biophotonics, 2004. APBP 2004..
We are reporting implementation of high quality time resolved laser scanning microscopy through modulation techniques. Inexpensive and commercially available electronics and mechanical optical modulator were integrated with an externally triggered la
Autor:
Peng-Hsiang Weng, 翁鵬翔
93
In this study we have successfully developed the techniques of time-resolved electro-luminescence (EL) and optical beam induced current (OBIC) microscopy for the mapping of photonic devices. We have applied the techniques to examine various p
In this study we have successfully developed the techniques of time-resolved electro-luminescence (EL) and optical beam induced current (OBIC) microscopy for the mapping of photonic devices. We have applied the techniques to examine various p
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/48051952218798257359
Publikováno v:
Applied Physics Letters. 99:221105
The GaN-based photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and investigated. The threshold energy densities increased from 3.23 to 3.51 mJ/cm2 when the central defect size increased. In addition, la
Autor:
Peng-Hsiang Weng, Fu-Jen Kao
Publikováno v:
Second Asian & Pacific Rim Symposium on Biophotonics, 2004 (APBP 2004); 2004, p97-98, 2p