Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Penchalaiah Palla"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-17 (2024)
Abstract Quantum light emitters (also known as single photon emitters) are known to be the heart of quantum information technologies. Irrespective of possessing ideal single photon emitter properties, quantum emitters in 2-D hBN defect structures, ex
Externí odkaz:
https://doaj.org/article/f608982694334c3b85f066babd31b77e
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-20 (2022)
Abstract This study presents extending the tunability of 2D hBN Quantum emitters towards telecom (C-band − 1530 to 1560 nm) and UV-C (solar blind − 100 to 280 nm) optical bands using external strain inducements, for long- and short-range quantum
Externí odkaz:
https://doaj.org/article/6284f1ea76394c19a43d3322150038dc
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-4 (2021)
Externí odkaz:
https://doaj.org/article/b34491fedfe94a948cb0b5515ba97e91
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-27 (2021)
Abstract Single photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects,
Externí odkaz:
https://doaj.org/article/3ae4f53d581a46f2918470aea46ad075
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 13:687-692
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fc4b77f86c1488f96f03b0e211e3b4d
https://doi.org/10.1166/jno.2018.2262
https://doi.org/10.1166/jno.2018.2262
Publikováno v:
International Journal of Nanotechnology. 18:751
Realisation of field-effect transistors in graphene with an energy gap remains one of the major difficulties for graphene based electronics. One of the solutions to engineer bandgap in graphene is ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc99c2c1a37f245a2192d053dea7355d
https://doi.org/10.1504/ijnt.2021.116187
https://doi.org/10.1504/ijnt.2021.116187
Publikováno v:
Bulletin of Materials Science. 39:1441-1451
In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adb1e10657cd15e4315c4e952db3c9fe
https://doi.org/10.1007/s12034-016-1285-9
https://doi.org/10.1007/s12034-016-1285-9
Autor:
Taraprasanna Saha Babu, J. P. Raina, Anita Sagadevan Ethiraj, Durgesh Laxman Tiwari, Penchalaiah Palla, Hasan Raza Ansari
Publikováno v:
AIP Conference Proceedings.
To make use of exceptional properties of graphene in Field effect Transistor (FETs) for switching devices a band gap must be introduced in order to switch -off the device. Through periodic nano perforations a semi-metallic graphene is converted into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::074b9ee8e50469ec85690ea13017c106
https://doi.org/10.1063/1.4946555
https://doi.org/10.1063/1.4946555
Publikováno v:
AIP Conference Proceedings.
The present work demonstrates the operation and performance of double barrier Graphene Antidot Resonant Tunnel Diode (DBGA-RTD). Non-Equilibrium Green’s Function (NEGF) frame work with tight-binding Hamiltonian and 2-D Poisson equations were solved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76642c5e91bb4e7a6268899f076b02ad
https://doi.org/10.1063/1.4945189
https://doi.org/10.1063/1.4945189