Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Pen-Hsiu Chang"'
Publikováno v:
Crystal Research and Technology. 42:1276-1280
The crystal quality of GaN thin film on silicon using GaN/AlN superlattice structures was investigated. The growth was carried out on Si(111) for GaN(0001) in a metal-organic vapor phase epitaxy system. Various GaN/AlN superlattice intermediate layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d44cdb4c4c28717f38973c76bc90d6
https://doi.org/10.1002/crat.200711018
https://doi.org/10.1002/crat.200711018
Publikováno v:
Japanese Journal of Applied Physics. 46:2840-2843
InN and In-rich InGaN were grown by metal organic vapor phase epitaxy with magnesium doping. A set of samples were grown at 550 °C, whereas a second set of samples were grown at increasing temperature with Ga content. Upon annealing, p-InGaN was obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::741773edb0aef9c99d46ece44919bdd1
https://doi.org/10.1143/jjap.46.2840
https://doi.org/10.1143/jjap.46.2840
Autor:
Gou-Chung Chi, Chii Chang Chen, B. J. Pong, Chia Hung Hou, Pen-Hsiu Chang, Chuan-Feng Shih, Ming-Hung Li, Nai-Chuan Chen
Publikováno v:
Applied optics. 45(11)
A prototype of a GaN-based stacked micro-optics system is demonstrated. The system consists of a GaN microlens, GaN membrane gratings, six spacers, a spatial filter, and a 980 nm VCSEL. The laser beam is collimated by the GaN microlens and diffracted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11ac6bf8af43aac9266ea5fa5e099934
https://pubmed.ncbi.nlm.nih.gov/16623234
https://pubmed.ncbi.nlm.nih.gov/16623234
Autor:
Pen-Hsiu Chang, 張本秀
89
The motivation of this work is to study the anomalous Hall effect of high Tc superconductors and using the microwave radiation to reduce the noise flux of SQUID. The complex behavior of HTS near Tc under magnetic fields could show some physic
The motivation of this work is to study the anomalous Hall effect of high Tc superconductors and using the microwave radiation to reduce the noise flux of SQUID. The complex behavior of HTS near Tc under magnetic fields could show some physic
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/47042808477654904280
Autor:
Gallinat, Chad S., Koblmüller, Gregor, Brown, Jay S., Bernardis, Sarah, Speck, James S., Chern, Grace D., Readinger, Eric D., Shen, Hongen, Wraback, Michael
Publikováno v:
Applied Physics Letters; 7/17/2006, Vol. 89 Issue 3, p032109, 3p, 4 Graphs
Autor:
Shih-Yu Hung, 洪士育
100
The purpose of this study is to investigate the magnetic and superconductive properties of InN-based thin films. InN-based thin films studies here are c-axis orientated Wurtzite structure with GaN buffer layer and sapphire substrate. The InN
The purpose of this study is to investigate the magnetic and superconductive properties of InN-based thin films. InN-based thin films studies here are c-axis orientated Wurtzite structure with GaN buffer layer and sapphire substrate. The InN
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/paqvq9
Autor:
Yu-shain Gou, 郭昱賢
99
In this thesis, we study the effect of annealing temperature, substrate/buffer layers and ion doping on crystal qualities and strain of indium nitride（InN）thin films by x-ray diffraction (XRD). InN thin films were grown sapphire and silic
In this thesis, we study the effect of annealing temperature, substrate/buffer layers and ion doping on crystal qualities and strain of indium nitride（InN）thin films by x-ray diffraction (XRD). InN thin films were grown sapphire and silic
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/cs6p2s
94
AlGaN/GaN HFETs have advantages in high-frequency (100GHz)、high-temperature (RT)、high-power、 low- noise applications of hetero-junction filed-effect transistors (HFETs) because of their high breakdown field, high peak velocity, high ban
AlGaN/GaN HFETs have advantages in high-frequency (100GHz)、high-temperature (RT)、high-power、 low- noise applications of hetero-junction filed-effect transistors (HFETs) because of their high breakdown field, high peak velocity, high ban
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/57866122184032156279
Autor:
Junichiro Kono, Jean Leotin
This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related