Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Pen Guo"'
Autor:
Jifeng Zhang, Guopen Miao, Shunjie Hu, Qi Sun, Hengwu Ding, Zhicheng Ji, Pen Guo, Shoubao Yan, Chengrun Wang, Xianzhao Kan, Liuwang Nie
Publikováno v:
BMC Ecology and Evolution, Vol 21, Iss 1, Pp 1-14 (2021)
Abstract Background Rearrangement is an important topic in the research of amphibian mitochondrial genomes ("mitogenomes" hereafter), whose causes and mechanisms remain enigmatic. Globally examining mitogenome rearrangements and uncovering their char
Externí odkaz:
https://doaj.org/article/3d785f0b51e24c588214af203477e726
Autor:
Qi Sun, Hengwu Ding, Liuwang Nie, Jifeng Zhang, Shunjie Hu, Xianzhao Kan, Shoubao Yan, Pen Guo, Chengrun Wang, Zhicheng Ji, Guopen Miao
Publikováno v:
BMC Ecology and Evolution
BMC Ecology and Evolution, Vol 21, Iss 1, Pp 1-14 (2021)
BMC Ecology and Evolution, Vol 21, Iss 1, Pp 1-14 (2021)
Background Rearrangement is an important topic in the research of amphibian mitochondrial genomes ("mitogenomes" hereafter), whose causes and mechanisms remain enigmatic. Globally examining mitogenome rearrangements and uncovering their characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afb540b97da19f34ab8cf3550f06cd05
https://pubmed.ncbi.nlm.nih.gov/33563214
https://pubmed.ncbi.nlm.nih.gov/33563214
Publikováno v:
Advanced Materials Research. :175-178
By using the ring-block friction and wear machine, the friction and wear behavior of nano-ZrO2 ceramic test block against GCr15 steel test ring has been studied. At the same time, friction and wear test of 45# steel block against GCr15 steel ring has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc8138bcee2daca86949b2909d238f9e
https://doi.org/10.4028/www.scientific.net/amr.105-106.175
https://doi.org/10.4028/www.scientific.net/amr.105-106.175
Publikováno v:
2011 IEEE International Conference on IC Design & Technology.
A new gate driven 3.3V ESD clamp circuit using 1.8V transistor is proposed. This new clamp circuit is suitable for ESD protection of legacy 3.3V I/O interface circuit in SOC chips which use only 1.8V I/O transistors. This clamp along with 3.3V I/O ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31f59c5ed4471efd0e8bbf251e659007
https://doi.org/10.1109/icicdt.2011.5783234
https://doi.org/10.1109/icicdt.2011.5783234