Zobrazeno 1 - 10
of 640
pro vyhledávání: '"Pelucchi E"'
Publikováno v:
Appl. Phys. Lett. 111, 083103 (2017)
We report on stacked multiple quantum dots (QDs) formed inside inverted pyramidal recesses, which allow for the precise positioning of the QDs themselves. Specifically we fabricated double QDs with varying inter-dot distance and ensembles with more t
Externí odkaz:
http://arxiv.org/abs/1708.09758
Publikováno v:
Nature Photonics 10, 782, 2016
Scalability and foundry compatibility (as for example in conventional silicon based integrated computer processors) in developing quantum technologies are exceptional challenges facing current research. Here we introduce a quantum photonic technology
Externí odkaz:
http://arxiv.org/abs/1707.06190
Autor:
Lebedev, D. V., Kulagina, M. M., Troshkov, S. I., Bogdanov, A. A., Vlasov, A. S., Davydov, V. Yu., Smirnov, A. N., Merz, J. L., Kapaldo, J., Gocalinska, A., Juska, G., Moroni, S. T., Pelucchi, E., Barettin, D., Rouvimov, S., Mintairov, A. M.
Formation, emission and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the
Externí odkaz:
http://arxiv.org/abs/1704.01635
Publikováno v:
Appl. Phys. Lett. 110, 113101 (2017)
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalo
Externí odkaz:
http://arxiv.org/abs/1703.07296
Publikováno v:
Crystal Growth and Design, 2016, 16, pp 2363
We present a selection of stack designs for MOVPE grown InxGa1-xAs metamorphic buffer layers following various convex-down compositional continuous gradients of the In content, showing that defect generation and strain can be managed in a variety of
Externí odkaz:
http://arxiv.org/abs/1604.05920
Autor:
Juska, G., Murray, E., Dimastrodonato, V., Chung, T. H., Moroni, S., Gocalinska, A., Pelucchi, E.
A study of highly symmetric site-controlled Pyramidal In0.25Ga0.75As quantum dots (QDs) is presented. It is discussed that polarization-entangled photons can be also obtained from Pyramidal QDs of different designs from the one already reported in Ju
Externí odkaz:
http://arxiv.org/abs/1502.05249
Autor:
Juska, G., Dimastrodonato, V., Mereni, L. O., Chung, T. H., Gocalinska, A., Pelucchi, E., Van Hattem, B., Ediger, M., Corfdir, P.
A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)B oriented GaAs substrates patterned with inverted 7.5 um pitch pyramidal recesses is presented. First, the composition of the confinement bar
Externí odkaz:
http://arxiv.org/abs/1407.0504
Autor:
Gocalinska, A., Manganaro, M., Juska, G., Dimastrodonato, V., Thomas, K., Joyce, B. A., Zhang, J., Vvedensky, D. D., Pelucchi, E.
Publikováno v:
Applied Physics Letters 104, 141606 (2014)
We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensio
Externí odkaz:
http://arxiv.org/abs/1404.3148
Publikováno v:
Physical Review B 87, 205422 (2013)
Site-controlled quantum dots formed during the deposition of (Al)GaAs layers by metalorganic vapor-phase epitaxy on GaAs(111)B substrates patterned with inverted pyramids result in geometric and compositional self-ordering along the vertical axis of
Externí odkaz:
http://arxiv.org/abs/1306.2161
Publikováno v:
A. Gocalinska, M. Manganaro, D. D. Vvedensky, and E. Pelucchi, Phys. Rev. B 86, 165307 (2012)
We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy. These films show a dramatic range of different surface morphologies as a funct
Externí odkaz:
http://arxiv.org/abs/1211.0159