Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Pellegren James"'
Publikováno v:
Phys. Rev. B 98, 184410 (2018)
We characterize asymmetric growth of magnetic bubble domains in perpendicularly magnetized Co/Ni multi-layers grown on Pt$_x$Ir$_{1-x}$ seedlayers by application of perpendicular and in-plane magnetic fields. Using a refined model of domain wall cree
Externí odkaz:
http://arxiv.org/abs/1808.05520
Autor:
Umut Arslan, Philip E. Heil, Smith Angeline K, Pedro A. Quintero, Ouellette Daniel G, Juan G. Alzate, Sell Bernhard, Smith Andrew, Fatih Hamzaoglu, M. Seth, Pellegren James, M. Mainuddin, Tahir Ghani, Y. J. Chen, P. Bai, Rownak Jahan, Tanmoy Pramanik, Tofizur Rahman, Liqiong Wei, Justin S. Brockman, Conor P. Puls, P. Hentges, M. Sekhar, Aaron J. Littlejohn, Kevin J. Fischer, Oleg Golonzka, Christopher J. Wiegand, Nilanjan Das
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this paper, we discuss array-level MTJ process, performance, and reliability requirements for STT-MRAM operation in an L4 Cache application. We demonstrate 2 MB arrays of scaled-size MTJ devices capable of meeting L4 Cache specifications across al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adee6532309b9d4a14a290211f8a3a0c
https://doi.org/10.1109/iedm19573.2019.8993474
https://doi.org/10.1109/iedm19573.2019.8993474
Autor:
Mesut Meterelliyoz, Tahir Ghani, Kevin J. Fischer, O'brien Kevin P, Pellegren James, Dmitri E. Nikonov, J.O Donnell, Chris Connor, Nilanjan Das, P. Nguyen, Smith Andrew, Buford Benjamin, Pedro A. Quintero, P. Hentges, Justin S. Brockman, M. Seth, M. Mainuddin, Philip E. Heil, Smith Angeline K, Brian S. Doyle, Rownak Jahan, Z. Zhang, David L. Kencke, M. Bohr, Liqiong Wei, P. Bai, Tofizur Rahman, M. Lu, Blake C. Lin, M. Sekhar, Conor P. Puls, Kaan Oguz, Joodong Park, A. Selarka, A. Romang, Oleg Golonzka, Christopher J. Wiegand, Juan G. Alzate, Ouellette Daniel G, Umut Arslan, Fatih Hamzaoglu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
This paper presents key features of MRAM-based non-volatile memory embedded into Intel 22FFL technology. 22FFL is a high performance, ultra low power FinFET technology for mobile and RF applications with extensive high voltage and analog support, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7ba36237ea81a7d30a38bf6d3d89035
https://doi.org/10.1109/iedm.2018.8614620
https://doi.org/10.1109/iedm.2018.8614620
Autor:
Pellegren, James Price
Materials Science and Engineering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::381a97fde6bdf26ab9c849ab8853d4ed
Akademický článek
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Autor:
Pellegren, James Price
Publikováno v:
Dissertations.
Externí odkaz:
http://repository.cmu.edu/dissertations/1088
http://repository.cmu.edu/cgi/viewcontent.cgi?article=2127&context=dissertations
http://repository.cmu.edu/cgi/viewcontent.cgi?article=2127&context=dissertations