Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Pekarik, John"'
Autor:
Renata Camillo-Castillo, James W. Adkisson, Pekarik John J, Q.Z. Liu, Peter B. Gray, D. L. Harame, Ramana M. Malladi, Marwan H. Khater, Vibhor Jain
Publikováno v:
ECS Transactions. 64:53-63
Scaling silicon germanium heterojunction bipolar transistors (SiGe HBTs) to attain simultaneous increases in the figures of merit, fT and fMAX has necessitated a deep understanding of the inherent features of the process as it relates to the final de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50662bb20e24fdce784e90a6e34b7736
https://doi.org/10.1149/06406.0053ecst
https://doi.org/10.1149/06406.0053ecst
Autor:
Renata Camillo-Castillo, Bjorn Zetterlund, Pekarik John J, Vibhor Jain, Peter B. Gray, Marwan H. Khater, Adam W. Divergilio, Michael L. Kerbaugh, Q.Z. Liu, James W. Adkisson, D. L. Harame
Publikováno v:
ECS Transactions. 64:285-294
Development of SiGe HBTs in BiCMOS technology with both high f T and f MAX faces significant challenges. To increase f T, thinning the base and collector thickness is generally the first step to reduce the carrier transit times, but this increases th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69b02641f1b8b2ba7829dd48493610e9
https://doi.org/10.1149/06406.0285ecst
https://doi.org/10.1149/06406.0285ecst
Autor:
James E. Dunn, Thomas Kessler, Peter B. Gray, R. Camillo-Castillo, D. L. Harame, Peng Cheng, Jeffrey P. Gambino, Vibhor Jain, Pekarik John J, Panglijen Candra
Publikováno v:
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
A manufacturable 130nm SiGe BiCMOS RF technology for high-performance mm-wave analog applications having a high-speed SiGe Heterojunction Bipolar Transistor (HBT) integrated into a full-featured RFCMOS is presented. The technology features a high per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::377181f23e88d0025df112ae9d753f8a
https://doi.org/10.1109/rfic.2013.6569610
https://doi.org/10.1109/rfic.2013.6569610
Autor:
Pekarik, John J., Coolbaugh, Douglas D., Cottrell, Peter E., Csutak, Sebastian M., Greenberg, David R., Jagannathan, Basanth, Sanderson, David I., Wagner, Lawrence, Walko, Joseph, Wang, Xudong, Watts, Josef
Publikováno v:
Pekarik, John J. ; Coolbaugh, Douglas D. ; Cottrell, Peter E. ; Csutak, Sebastian M. ; Greenberg, David R. ; Jagannathan, Basanth ; Sanderson, David I. ; Wagner, Lawrence ; Walko, Joseph ; Wang, Xudong ; Watts, Josef (2005) Enabling RFCMOS solutions for emergingadvanced applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
The enablement of advanced RF applications with CMOS is discussed. This is accomplished through a broad menu of low-cost and high-performance modular technology features with accompanying scalable devices models which are accurate to frequencies well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56ed477ccd41abbacde41803e1be57a6
http://amsacta.unibo.it/1758/
http://amsacta.unibo.it/1758/
Publikováno v:
2014 IEEE Radio Frequency Integrated Circuits Symposium; 2014, p21-24, 4p
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 2014, p207-210, 4p
Autor:
Pekarik, John J., Adkisson, J., Gray, P., Liu, Q., Camillo-Castillo, R., Khater, M., Jain, V., Zetterlund, B., DiVergilio, A., Tian, X., Vallett, A., Ellis-Monaghan, J., Gross, B. J., Cheng, P., Kaushal, V., He, Z., Lukaitis, J., Newton, K., Kerbaugh, M., Cahoon, N.
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 2014, p92-95, 4p
Autor:
Candra, Panglijen, Jain, Vibhor, Cheng, Peng, Pekarik, John, Camillo-Castillo, R., Gray, Peter, Kessler, Thomas, Gambino, Jeffrey, Dunn, James, Harame, David
Publikováno v:
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC); 2013, p381-384, 4p
Autor:
Jain, Vibhor, Zetterlund, Bjorn, Cheng, Peng, Camillo-Castillo, Renata A., Pekarik, John J., Adkisson, James W., Liu, Qizhi, Gray, Peter B., Kaushal, Vikas, Kessler, Thomas, Harame, David
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 01/01/2013, p17-20, 4p
Autor:
Pekarik, John J., Adkisson, James W., Camillo-Castillo, Renata, Cheng, Peng, DiVergilio, Adam W., Gray, Peter B., Jain, Vibhor, Kaushal, Vikas, Khater, Marwan H., Liu, Qizhi, Harame, David L.
Publikováno v:
2012 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 1/ 1/2012, p1-4, 4p