Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Pejović Momčilo M."'
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 31, Iss 4, Pp 349-355 (2016)
The pMOS dosimeters sensitivity (Tyndall National Institute, Cork, Ireland) to gamma and X-ray irradiation and 2000 h fading at room temperature is presented. The radiation fields were created using a 60Co source for two dose ranges (1-5 Gy and 10
Externí odkaz:
https://doaj.org/article/a46b9b0d84fa46d2b16978a5d92127c9
Publikováno v:
In Applied Radiation and Isotopes July 2013 77:44-49
Autor:
Pejović, Momčilo M., Živanović, Emilija N., Pejović, Milić M., Nešić, Nikola T., Kovačević, Dragan
Publikováno v:
In Vacuum 20 July 2012 86(12):1860-1866
Publikováno v:
In Sensors & Actuators: A. Physical 2012 174:85-90
Autor:
Pejović Milić M., Pejović Momčilo M., Jakšić Aleksandar B., Stanković Koviljka Đ., Marković Slavoljub A.
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 27, Iss 4, Pp 341-345 (2012)
The paper investigates a possibility of pMOS dosimeter re-use for the measurement of gamma-ray irradiation. The dosimeters were irradiated to the dose of 35 Gy, annealed at room and elevated temperatures, after which they were irradiated again to the
Externí odkaz:
https://doaj.org/article/5d44b5153b7c4eebb44c6116f6efbe39
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 26, Iss 1, Pp 25-31 (2011)
The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated. It has been shown that for the ga
Externí odkaz:
https://doaj.org/article/a9d817744e354b4aac09f8eebf747e4a
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 26, Iss 3, Pp 261-265 (2011)
Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the change
Externí odkaz:
https://doaj.org/article/0c8616f063094089981ca08baa959461
Publikováno v:
In Solid State Electronics August 2008 52(8):1197-1201
Publikováno v:
In Applied Surface Science 2006 252(8):3023-3032
Publikováno v:
In Solid State Electronics 2005 49(7):1140-1152