Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Pejović Milić M."'
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 36, Iss 3, Pp 243-248 (2021)
The paper presents results of electrical breakdown time delay mean value t¯d as a function of relaxation time τ (memory curve) for krypton and xenon-filled diodes at 270 Pa pressure. Memory curves were obtained for the cases without radiation as
Externí odkaz:
https://doaj.org/article/161f21c5f4f84e4ab08f4542f3fb2ab1
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 33, Iss 1, Pp 81-86 (2018)
The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The de
Externí odkaz:
https://doaj.org/article/9da90966bc574b488ba5e8ec17bd1d14
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 29, Iss 3, Pp 179-185 (2014)
In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using 60Co so
Externí odkaz:
https://doaj.org/article/6bf4e9dcb8c246ec99a1f3ba66023a43
Autor:
Pejović Milić M.
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 28, Iss 4, Pp 415-421 (2013)
The gamma-ray irradiation sensitivity to radiation dose range from 0.5 Gy to 5 Gy and post-irradiation annealing at room and elevated temperatures have been studied for p-channel metal-oxide-semiconductor field effect transistors (also known as ra
Externí odkaz:
https://doaj.org/article/4d4b7de9adef4312869641135c30399b
Autor:
Pejović Milić M., Pejović Momčilo M., Jakšić Aleksandar B., Stanković Koviljka Đ., Marković Slavoljub A.
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 27, Iss 4, Pp 341-345 (2012)
The paper investigates a possibility of pMOS dosimeter re-use for the measurement of gamma-ray irradiation. The dosimeters were irradiated to the dose of 35 Gy, annealed at room and elevated temperatures, after which they were irradiated again to the
Externí odkaz:
https://doaj.org/article/5d44b5153b7c4eebb44c6116f6efbe39
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 26, Iss 1, Pp 25-31 (2011)
The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated. It has been shown that for the ga
Externí odkaz:
https://doaj.org/article/a9d817744e354b4aac09f8eebf747e4a
Publikováno v:
In Applied Radiation and Isotopes February 2023
Autor:
Pejović, Milić M.
Publikováno v:
In Vacuum July 2022 201
Akademický článek
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Autor:
Pejović, Milić M.
Publikováno v:
In Applied Radiation and Isotopes October 2015 104:100-105