Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Peize Yuan"'
Autor:
Xueping Li, Peize Yuan, Lin Li, Ting Liu, Chenhai Shen, Yurong Jiang, Xiaohui Song, Jingbo Li, Congxin Xia
Publikováno v:
Nanoscale. 15:356-364
A device with a gate length less than 3 nm has a low subthreshold swing, fast switching speeds, and low switching energies, and the related parameters can simultaneously satisfy the ITRS in 2028.
Publikováno v:
Physical Review Applied. 19
Autor:
Xueping, Li, Peize, Yuan, Lin, Li, Ting, Liu, Chenhai, Shen, Yurong, Jiang, Xiaohui, Song, Jingbo, Li, Congxin, Xia
Publikováno v:
Nanoscale. 15(1)
It is hoped that two-dimensional (2D) semiconductors overcome the short channel effect and continue Moore's law. However, 2D material-based ultra-short channel devices still face the challenge of simultaneously achieving high-performance (HP) and low
Autor:
Xueping Li, Peize Yuan, Lin Li, Ting Liu, Chenhai Shen, Yurong Jiang, Xiaohui Song, Congxin Xia
Publikováno v:
Frontiers of Physics. 18
Publikováno v:
Physical Review Applied. 18
Autor:
Xueping Li, Tongtong Li, Peize Yuan, Lin Li, Chenhai Shen, Yurong Jiang, Xiaohui Song, Congxin Xia
Publikováno v:
Applied Surface Science. 630:157436
Publikováno v:
Journal of Physics: Condensed Matter. 35:043001
Van der Waals heterostructures (vdWHs) which combine two different materials together have attracted extensive research attentions due to the promising applications in optoelectronic and electronic devices, the investigations from theoretical simulat