Zobrazeno 1 - 10
of 1 159
pro vyhledávání: '"Peiner E"'
Autor:
Dreher, L., Bihler, C., Peiner, E., Waag, A., Schoch, W., Limmer, W., Goennenwein, S. T. B., Brandt, M. S.
A modeling approach for standing spin-wave resonances based on a finite-difference formulation of the Landau-Lifshitz-Gilbert equation is presented. In contrast to a previous study [Bihler et al., Phys. Rev. B 79, 045205 (2009)], this formalism accou
Externí odkaz:
http://arxiv.org/abs/1303.1192
Autor:
Anang FEB; Institute of Semiconductor Technology, Technische Universität Braunschweig, 38106 Braunschweig, Germany.; Scientific Metrology Department, Ghana Standards Authority (GSA), Accra P.O. Box MB 245, Ghana., Refino AD; Institute of Semiconductor Technology, Technische Universität Braunschweig, 38106 Braunschweig, Germany., Harm G; Institute of Semiconductor Technology, Technische Universität Braunschweig, 38106 Braunschweig, Germany., Li D; Institute of Semiconductor Technology, Technische Universität Braunschweig, 38106 Braunschweig, Germany., Xu J; Institute of Semiconductor Technology, Technische Universität Braunschweig, 38106 Braunschweig, Germany., Cain M; Electrosciences Ltd., Farnham GU9 9QT, Surrey, UK., Brand U; Surface Metrology Department, Physikalisch-Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany., Li Z; Surface Metrology Department, Physikalisch-Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany., Görke M; Institute for Particle Technology, Technische Universität Braunschweig, 38104 Braunschweig, Germany., Garnweitner G; Institute for Particle Technology, Technische Universität Braunschweig, 38104 Braunschweig, Germany.; Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, 38106 Braunschweig, Germany., Peiner E; Institute of Semiconductor Technology, Technische Universität Braunschweig, 38106 Braunschweig, Germany.; Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, 38106 Braunschweig, Germany.
Publikováno v:
Micromachines [Micromachines (Basel)] 2024 Sep 24; Vol. 15 (10). Date of Electronic Publication: 2024 Sep 24.
Autor:
Wasisto HS; Infineon Technologies AG, Am Campeon 1-15, Neubiberg, Germany. hutomosuryo.wasisto@infineon.com., Anzinger S; Infineon Technologies AG, Am Campeon 1-15, Neubiberg, Germany., Acanfora G; Infineon Technologies AG, Am Campeon 1-15, Neubiberg, Germany.; Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Hans-Sommer-Str. 66, Braunschweig, Germany., Farrel A; Infineon Technologies AG, Am Campeon 1-15, Neubiberg, Germany.; TUM School of Natural Sciences, Technische Universität München, James-Franck-Str. 1, Garching, Germany., Sabatini V; SAATI SPA, Via Milano 14, Appiano Gentile, Como, Italy., Grimoldi E; SAATI SPA, Via Milano 14, Appiano Gentile, Como, Italy., Marelli V; SAATI SPA, Via Milano 14, Appiano Gentile, Como, Italy., Ovsiannikov N; Infineon Technologies AG, Am Campeon 1-15, Neubiberg, Germany.; TUM School of Computation, Information, and Technology (CIT), Technische Universität München, Arcisstraße 21, München, Germany., Tkachuk K; Infineon Technologies AG, Am Campeon 1-15, Neubiberg, Germany., Tosolini G; Infineon Technologies AG, Am Campeon 1-15, Neubiberg, Germany., Lucignano C; SAATI SPA, Via Milano 14, Appiano Gentile, Como, Italy., Mietta M; SAATI SPA, Via Milano 14, Appiano Gentile, Como, Italy., Zhang G; Infineon Technologies AG, Am Campeon 1-15, Neubiberg, Germany., Fueldner M; Infineon Technologies AG, Am Campeon 1-15, Neubiberg, Germany., Peiner E; Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Hans-Sommer-Str. 66, Braunschweig, Germany. e.peiner@tu-braunschweig.de.
Publikováno v:
Communications engineering [Commun Eng] 2024 Sep 23; Vol. 3 (1), pp. 136. Date of Electronic Publication: 2024 Sep 23.
Autor:
Limmer, W., Koeder, A., Frank, S., Avrutin, V., Schoch, W., Sauer, R., Zuern, K., Eisenmenger, J., Ziemann, P., Peiner, E., Waag, A.
The effect of annealing at 250 C on the carrier depth profile, Mn distribution, electrical conductivity, and Curie temperature of (Ga,Mn)As layers with thicknesses > 200 nm, grown by molecular-beam epitaxy at low temperatures, is studied by a variety
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503595
Akademický článek
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Autor:
Setiono A; Laboratory for Emerging Nanometrology (LENA), Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, 38106 Braunschweig, Germany.; Research Center for Photonics-National Research and Innovation Agency (BRIN), South Tangerang 15314, Indonesia., Nelfyenny; Research Center for Photonics-National Research and Innovation Agency (BRIN), South Tangerang 15314, Indonesia., Nyang'au WO; Laboratory for Emerging Nanometrology (LENA), Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, 38106 Braunschweig, Germany.; Department of Metrology, Kenya Bureau of Standards (KEBS), Nairobi 00200, Kenya., Peiner E; Laboratory for Emerging Nanometrology (LENA), Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, 38106 Braunschweig, Germany.
Publikováno v:
Sensors (Basel, Switzerland) [Sensors (Basel)] 2024 Apr 05; Vol. 24 (7). Date of Electronic Publication: 2024 Apr 05.
Autor:
Firdaus AM; Materials Science and Engineering Research Group, Faculty of Mechanical and Aerospace Engineering, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia., Hawari NH; Materials Science and Engineering Research Group, Faculty of Mechanical and Aerospace Engineering, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia., Adios CG; Materials Science and Engineering Research Group, Faculty of Mechanical and Aerospace Engineering, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia., Nasution PM; Materials Science and Engineering Research Group, Faculty of Mechanical and Aerospace Engineering, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia., Peiner E; Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106, Germany., Wasisto HS; PT Nanosense Instrument Indonesia, Umbulharjo, Yogyakarta 55167, Indonesia., Sumboja A; Materials Science and Engineering Research Group, Faculty of Mechanical and Aerospace Engineering, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia.; Research Collaboration Center for Advanced Energy Materials, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia.
Publikováno v:
Chemistry, an Asian journal [Chem Asian J] 2024 Apr 02; Vol. 19 (7), pp. e202400036. Date of Electronic Publication: 2024 Mar 13.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
Anang FEB; Institute of Semiconductor Technology, TU Braunschweig, 38104 Braunschweig, Germany.; Scientific Metrology Department, Ghana Standards Authority, Accra P.O. Box MB 245, Ghana., Wei X; Institute of Semiconductor Technology, TU Braunschweig, 38104 Braunschweig, Germany., Xu J; Institute of Semiconductor Technology, TU Braunschweig, 38104 Braunschweig, Germany., Cain M; Electrosciences Ltd., Farnham, Surrey GU9 9QT, UK., Li Z; Surface Metrology Department, Physikalisch-Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany., Brand U; Surface Metrology Department, Physikalisch-Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany., Peiner E; Institute of Semiconductor Technology, TU Braunschweig, 38104 Braunschweig, Germany.
Publikováno v:
Micromachines [Micromachines (Basel)] 2024 Feb 10; Vol. 15 (2). Date of Electronic Publication: 2024 Feb 10.
Autor:
Refino AD; Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany. andam.refino@tu-braunschweig.de.; Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, 38106, Braunschweig, Germany. andam.refino@tu-braunschweig.de.; Engineering Physics Program, Institut Teknologi Sumatera (ITERA), Jl. Terusan Ryacudu, Way Huwi, Lampung Selatan, Lampung, 35365, Indonesia. andam.refino@tu-braunschweig.de., Yulianto N; Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany.; Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, 38106, Braunschweig, Germany.; Research Center for Physics, National Research and Innovation Agency (BRIN), Jl. Kawasan Puspiptek No. 441-442, South Tangerang, 15314, Indonesia., Syamsu I; Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany.; Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, 38106, Braunschweig, Germany.; Research Center for Electronics and Telecommunication, National Research and Innovation Agency (BRIN), Jl. Sangkuriang-Komplek LIPI Gedung 20, Bandung, 40135, Indonesia., Nugroho AP; Material Science and Engineering Research Group, Faculty of Mechanical and Aerospace Engineering, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia., Hawari NH; Material Science and Engineering Research Group, Faculty of Mechanical and Aerospace Engineering, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia., Syring A; Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany.; Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, 38106, Braunschweig, Germany., Kartini E; Center for Science and Technology of Advanced Materials, National Nuclear Energy Agency (BATAN), South Tangerang, 15314, Indonesia., Iskandar F; Department of Physics, Faculty of Mathematics and Natural Science, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia., Voss T; Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany.; Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, 38106, Braunschweig, Germany., Sumboja A; Material Science and Engineering Research Group, Faculty of Mechanical and Aerospace Engineering, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung, 40132, Indonesia., Peiner E; Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany.; Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, 38106, Braunschweig, Germany., Wasisto HS; Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106, Braunschweig, Germany. h.wasisto@nanosense-id.com.; Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, 38106, Braunschweig, Germany. h.wasisto@nanosense-id.com.; PT Nanosense Instrument Indonesia, Umbulharjo, Yogyakarta, 55167, Indonesia. h.wasisto@nanosense-id.com.
Publikováno v:
Scientific reports [Sci Rep] 2021 Oct 05; Vol. 11 (1), pp. 19779. Date of Electronic Publication: 2021 Oct 05.