Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Peinan Ni"'
Autor:
Qinghua Song, Arthur Baroni, Rajath Sawant, Peinan Ni, Virginie Brandli, Sébastien Chenot, Stéphane Vézian, Benjamin Damilano, Philippe de Mierry, Samira Khadir, Patrick Ferrand, Patrice Genevet
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Controlling light with planar elements requires full polarization channels and reconstruction of optical signals. Here, the authors have demonstrated a general method relying on pixelated metasurfaces that enables wavefront shaping with arbitrary out
Externí odkaz:
https://doaj.org/article/453415e54c4b4f15a87206b6f808da49
Autor:
Haoran Ren, Gauthier Briere, Xinyuan Fang, Peinan Ni, Rajath Sawant, Sébastien Héron, Sébastien Chenot, Stéphane Vézian, Benjamin Damilano, Virginie Brändli, Stefan A. Maier, Patrice Genevet
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Conventional hologram designs lack orbital angular momentum selectivity. Here, the authors design metasurface holograms consisting of GaN nanopillars with discrete spatial frequency distributions allowing the reconstruction of distinctive orbital ang
Externí odkaz:
https://doaj.org/article/8c0478d64e3748a9be62d441a1b84381
Autor:
Jinchao Tong, Yiyang Xie, Zhengji Xu, Shupeng Qiu, Peinan Ni, Landobasa Y. M. Tobing, Dao-Hua Zhang
Publikováno v:
AIP Advances, Vol 6, Iss 2, Pp 025120-025120-7 (2016)
We report detailed investigation of n-GaSb/n-InAsSb heterostructure photodetectors for infrared photodetection at different temperatures and biases. Our results show that the heterostructure photodetectors are capable of dual color photodetections at
Externí odkaz:
https://doaj.org/article/2a04c1a5d75243d2a2f46ba559dae864
Autor:
Patrice Genevet, Peinan Ni, Stéphane Vézian, Virginie Brandli, Sébastien Chenot, Benjamin Damilano, Patrick Ferrand, Philippe De Mierry, Arthur Baroni, Rajath Sawant, Samira Khadir, Qinghua Song
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Nature Communications
Nature Communications, 2020, 11, pp.2651. ⟨10.1038/s41467-020-16437-9⟩
Nature Communications, Nature Publishing Group, 2020, 11, pp.2651. ⟨10.1038/s41467-020-16437-9⟩
Nature Communications
Nature Communications, 2020, 11, pp.2651. ⟨10.1038/s41467-020-16437-9⟩
Nature Communications, Nature Publishing Group, 2020, 11, pp.2651. ⟨10.1038/s41467-020-16437-9⟩
Controlling light properties with diffractive planar elements requires full-polarization channels and accurate reconstruction of optical signal for real applications. Here, we present a general method that enables wavefront shaping with arbitrary out
Publikováno v:
Applied Surface Science. 427:605-608
We present the effect of interface quality on the performance of InAsSb based hetero n-i-p middle wavelength infrared (MWIR) photodiodes. By adopting heavily doping wide bandgap p- and n-type layers and inserting a thin layer between the two doped la
Autor:
Bo Wu, Pei-Pei Chen, Hongda Chen, Chen Xu, Qiu-Hua Wang, Yiyang Xie, Shuangpeng Wang, Peinan Ni, Yu-Fei Liu, Pan Fu, Qiang Kan
Publikováno v:
Advanced Optical Materials. 9:2101308
Autor:
Landobasa Y. M. Tobing, Dao Hua Zhang, Xiao-Hong Tang, Jinchao Tong, Zhengji Xu, Shupeng Qiu, Peinan Ni
Publikováno v:
Journal of Electronic Materials. 46:3867-3872
We present a simple thermal treatment with the antimony source for the metal–organic chemical vapor deposition of thin GaSb films on GaAs (111) substrates for the first time. The properties of the as-grown GaSb films are systematically analyzed by
Publikováno v:
Procedia Engineering. 215:24-30
We report high quality InAsSb films grown on GaSb substrates using metal-organic chemical vapor deposition (MOCVD) technique through interface engineering. This work shows that the interface quality of the hetero-epitaxial InAsSb layer strongly depen
Publikováno v:
Procedia Engineering. 215:82-88
Ge x Sn 1-x is one of the most promising materials in optoelectronics for its direct band-gap nature. In this paper, we report high-quality Ge and Sn thin films deposited on Si (001) substrates by magnetron sputtering. We found that the growth power
Autor:
Benjamin Damilano, Sébastien Chenot, Peinan Ni, Gauthier Briere, V. Brandii, Sébastien Héron, Masanobu Iwanaga, Stéphane Vézian, Patrice Genevet, Jean-Yves Duboz
Publikováno v:
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
A new class of planar, wavelength-thick optical components exhibiting exceptional optical properties have emerged in recent years[1–3]. These artificial interfaces, known as metasurfaces, rely on the scattering properties of the subwavelength struc