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pro vyhledávání: '"Peimian Cai"'
Autor:
Xiongfeng Wang, Zhenyi Guo, Weiying Zheng, Zhiquan Liu, Tengzhang Liu, Xiaopei Chen, Peimian Cai, Qiyan Zhang, Wugang Liao
Publikováno v:
APL Materials, Vol 12, Iss 11, Pp 111105-111105-10 (2024)
This study delves into the characterization of IGZO/ZnO bilayer memristors, examining the impact of ZnO thickness and voltage scan rate on device performance. Bilayer memristors with varying ZnO thicknesses were prepared using magnetron sputtering, a
Externí odkaz:
https://doaj.org/article/734861fbb3774563bed49220c61e15d2
