Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Peilu, Jiang"'
Autor:
Peilu Jiang, Huangkai Zhou, Subin Song, Kota Suzuki, Kenta Watanabe, Yumi Yamaguchi, Naoki Matsui, Satoshi Hori, Ryoji Kanno, Masaaki Hirayama
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-14 (2024)
Abstract All-solid-state lithium–sulfur batteries exhibit high energy densities, operate safely, and suppress polysulfide shuttling. However, their electrochemical performance is restricted by the insulating nature of sulfur and Li2S, and by severe
Externí odkaz:
https://doaj.org/article/a765bbee8987472083494e8e2fa93efe
Akademický článek
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Autor:
Zedong Zhao, Peilu Jiang, Mengxiong Li, Long Zhang, Yanglong Hou, Tianqi Wu, Liu Peiying, Teng Zhang, Pan Shaoxue, Yicheng Liu, Hongbin Lu, Tianyu Tang
Publikováno v:
ACS Nano. 14:8495-8507
The development of Li-S batteries is largely impeded by the complicated shuttle effect of lithium polysulfides (LiPSs) and sluggish reaction kinetics. In addition, the low mass loading/utilization of sulfur is another key factor that makes Li-S batte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e5ada6c261a6873ba0c6f098f29ba87
https://doi.org/10.1021/acsnano.0c02762
https://doi.org/10.1021/acsnano.0c02762
Autor:
Long, Zhang, Yicheng, Liu, Zedong, Zhao, Peilu, Jiang, Teng, Zhang, Mengxiong, Li, Shaoxue, Pan, Tianyu, Tang, Tianqi, Wu, Peiying, Liu, Yanglong, Hou, Hongbin, Lu
Publikováno v:
ACS nano. 14(7)
The development of Li-S batteries is largely impeded by the complicated shuttle effect of lithium polysulfides (LiPSs) and sluggish reaction kinetics. In addition, the low mass loading/utilization of sulfur is another key factor that makes Li-S batte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e430660d63433f9ccf865cf43561e5fd
https://pubmed.ncbi.nlm.nih.gov/32568516
https://pubmed.ncbi.nlm.nih.gov/32568516
Autor:
Mengxiong Li, Xiao Chi, Zhongxin Chen, Lei Dong, Caozheng Diao, Nanchen Dongfang, Long Zhang, Kian Ping Loh, Hongbin Lu, Qingsong Wu, Zedong Zhao, Renchao Che, Peilu Jiang
Publikováno v:
Advanced Energy Materials. 8:1870152
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cd5b9f56d1d538d49e8c33313bd3414
https://doi.org/10.1002/aenm.201870152
https://doi.org/10.1002/aenm.201870152
Autor:
Zhongxin Chen, Xiao Chi, Kian Ping Loh, Lei Dong, Caozheng Diao, Zedong Zhao, Qingsong Wu, Renchao Che, Long Zhang, Nanchen Dongfang, Peilu Jiang, Hongbin Lu, Mengxiong Li
Publikováno v:
Advanced Energy Materials. 8:1802431
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42cad0dae834c553657dcc6dabc181f7
https://doi.org/10.1002/aenm.201802431
https://doi.org/10.1002/aenm.201802431
Publikováno v:
SPIE Proceedings.
The semiconductor-passivating layer interface, as well as the dielectric properties of the passivants, plays an important role in HgCdTe based photoelectric detectors. Anodization is a commonly uses surface passivation for HgCdTe. ZnS is deposited on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2fe00ad1356dc42f0c64ca9d1c7c563
https://doi.org/10.1117/12.975117
https://doi.org/10.1117/12.975117
Publikováno v:
SPIE Proceedings.
This paper concerned HgCdTe (MCT) infrared photoconductor detectors with high operating temperature. The near room temperature operations of detectors had advantages of light weight, less cost and convenient usage. The selection of material could gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55d2d5f73b686a783eb127f3f9a71da9
https://doi.org/10.1117/12.901974
https://doi.org/10.1117/12.901974
Publikováno v:
SPIE Proceedings.
GaN-based avalanche photodiodes (APDs) have become of increased interest in the UV detection arenas. However, numerous material-, fabrication-, and design-related problems are exactly settled before GaN-based APDs can be commercialized. In this study
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4d2134bc22117611e51476280baed94
https://doi.org/10.1117/12.835325
https://doi.org/10.1117/12.835325
Autor:
Yongfu, Li, Hengjing, Tang, Tao, Li, Yaoming, Zhu, Peilu, Jiang, Hui, Qiao, Xue, Li, Haimei, Gong
Publikováno v:
Journal of Semiconductors; Jan2010, Vol. 31 Issue 1, p013002-013006, 5p