Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Peijie Feng"'
Publikováno v:
International Journal of Hydrogen Energy.
Autor:
S.C. Song, Giri Nallapati, Irfan Khan, Nader Nikfar, Bohan Yan, Miguel Miranda, Bruce Lim, Mali Nagarajan, Joon-Young Park, Vaishnav Srinivas, Reza Langari, Bharani Chava, Venu Sanaka, Venu Boynapalli, Paras Gupta, Shree Pandey, Biancun Xie, Peijie Feng, Jihong Choi, Titash Rakshit, Ravi Shenoy, Mahadev Nemani, Colin Verrilli, John Zhu, Jun Chen, Mark Nakamoto, Lily Zhao, Yangyang Sun, Francois Atallah, Jonghae Kim, Rashid Attar, Chidi Chidambaram
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Autor:
Xi-Wei Lin, Nicolas Breil, Michael Chudzik, Chidi Chidambaram, S. C. Song, Munkang Choi, Victor Moroz, Benjamin Colombeau, Qiang Lu, Giri Nallapati, Jerry Bao, Peijie Feng, John Jianhong Zhu
Publikováno v:
IEEE Electron Device Letters. 38:1657-1660
This letter, for the first time, investigates interactive logic cell schemes and transistor architecture scaling options for 5-nm technology node (N5) and beyond. The proposed novel transistors, such as Hexagonal NanoWire (NW) and NanoRing (NR) archi
Autor:
Shinichiro Kakita, Peijie Feng, Mohamed A. Rabie, Rudy Ratnadurai Giridharan, Daniel Smith, Dingyou Zhang, Luke England, Gopal Kumarapuram, Holly Edmundson
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 28:454-460
This paper presents challenges encountered in the fabrication of high aspect ratio (AR) via middle, through-silicon vias (TSVs), of 3 ${\mu }\text{m}$ top entrant critical dimension and 50 ${\mu }\text{m}$ depth. Higher AR TSV integration is explored
Autor:
Po-Wen Chan, Jeff Xu, Jeffrey Smith, Jerry Bao, S. C. Song, Keagan Chen, Da Yang, Naoto Horiguchi, Suman Datta, David Kohen, Mustafa Badaroglu, Hans Mertens, Peijie Feng, John Jianhong Zhu, Geert Eneman, Romain Ritzenthaler, P. R. Chidi Chidambaram
Publikováno v:
ESSDERC
We present a 5nm logic technology scaling step-up holistic approach for 5-track standard cell design employing electrically gate-all-around nanowire architecture (EGAA NW) with much reduced parasitic capacitance and increased effective width for bett
Autor:
Ping Liu, Sung-Gun Kang, Jackie Yang, S. C. Song, Xiao-Yong Wang, Yanxiang Liu, Jedon Kim, Yandong Gao, Lixin Ge, Suh Youseok, Sam Yang, Jie Deng, Sung-Won Kim, Xiangdong Chen, Peijie Feng, Ken Rim, John Jianhong Zhu, Ming Cai, Chul-Yong Park, Da Yang, Jun Yuan, Hao Wang, Jihong Choi, Esin Terzioglu, P. R. Chidi Chidambaram, Jerry Bao, Paul Ivan Penzes
Publikováno v:
2017 Symposium on VLSI Technology.
The industry's first 10nm low power high performance mobile SoC has been successfully ramped in production. Thanks to a thorough design-technology co-development, 10nm SoC is 16% faster, 37% smaller, and 30% lower power than its 14nm predecessor. The
Autor:
Junjing Bao, Ken Rim, S. C. Song, Jeffrey Junhao Xu, Giri Nallapati, Joseph Wang, Geoffrey Yeap, Mustafa Badaroglu, Praneeth Narayanasetti, Peijie Feng, John Jianhong Zhu, J. Fischer, Da Yang, B. Bucki
Publikováno v:
VLSI Circuits
We propose complete technology-design-system co-optimization method in which power, performance, thermal, area and cost metrics are all simultaneously optimized from transistor to mobile SOC system level. This novel method, Unified Technology Optimiz
Autor:
Peijie Feng, Prasanta Ghosh
Publikováno v:
World Journal of Nano Science and Engineering. :88-91
In this paper, we propose multi-fin FET design techniques targeted for RF applications. Overlap and underlap design configuration in a base FinFET are compared first and then multi-fin device (consisting of transistor unit up to 50) is studied to dev
Publikováno v:
Materials Letters. 121:126-128
Silicone rubbers were successfully foamed by supercritical carbon dioxide (SC CO2). Samples were precured and fully cured before and after the basic foaming process with SC CO2. The effects of precuring time and soaking pressure on the density and po
Autor:
Shesh Mani Pandey, Michelle Tng, Muhammad Rahman, Francis Benistant, Jin Cho, L. Jiang, Baofu Zhu, Jiseok Kim, Yumi Park, Pei Zhao, Peijie Feng, Edmund Banghart, Sudarshan Narayanan, Bingwu Liu
Publikováno v:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
This work demonstrated a novel method utilizing Sentaurus Technology Computer Aided Design simulation along with experiments to intermediately extract Schottky barrier height and contact resistance in FinFETs. The proposed algorithm can automatically