Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Peiching Ling"'
Publikováno v:
2015 IEEE 65th Electronic Components and Technology Conference (ECTC).
The LED industry is extremely price sensitive to manufacturing cost. The challenge is to produce modules (or the light engines) without compromising reliability. The present approach is to work within the standard assembly flow structure and focus on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e82e3bc8845866b3286b520bba7e77d5
https://doi.org/10.1109/ectc.2015.7159595
https://doi.org/10.1109/ectc.2015.7159595
Publikováno v:
Journal of Applied Physics. 71:3225-3230
The quality of epitaxial silicon grown on regions exposed to plasma etching using He, CHF3, and CF4 etching gases has been studied. Plasma‐etch‐induced surface damage leads to defects in the epilayers. Dislocation loops and precipitates at the ep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24ea95bbb393806968402f618e3ef2d
https://doi.org/10.1063/1.350968
https://doi.org/10.1063/1.350968
Publikováno v:
Journal of Applied Physics. 70:685-692
The low‐temperature epitaxial growth of Si under conditions in which no nucleation occurs on SiO2 (selective growth) results in interesting new surface morphology. For substrates free of nonvolatile surface contaminants, specular defect‐free film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9f34a367867b9a2f3509a74574cb44b
https://doi.org/10.1063/1.349648
https://doi.org/10.1063/1.349648
Publikováno v:
IEEE Transactions on Magnetics. 34:1567-1569
The effect of carbon and chromium diffusion on CoCrTa thin-film media was studied. RBS (Rutherford backscattering) data and TEM (transmission electron microscopy) micrographs indicate that the CoCr/sub 14/Ta/sub 6/ film has a higher film density than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1a28220d89ce10e320059ac1668b270
https://doi.org/10.1109/20.706617
https://doi.org/10.1109/20.706617
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
We present a new method for making shallow p-type junctions in silicon by molecular ion implantation. Unlike current molecular ion implantation methods which use BF/sub 2/ molecules, this new method uses BSi/sub x/, where the silicon is completely mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eefea2ea7f642258245e51fcbf5dcc97
https://doi.org/10.1109/iit.1998.813893
https://doi.org/10.1109/iit.1998.813893
Autor:
Jianyue Jin, Peiching Ling, Wei-Kan Chu, Lin Shao, Jiarui Liu, Xinming Lu, Quark Y. Chen, Xuemei Wang
Publikováno v:
AIP Conference Proceedings.
A two-step annealing was performed to study the diffusion of B in the GeB- cluster ion implanted Si. Samples implanted with 15-keV, 1×1015/cm2 GeB- ion cluster were rapid thermal annealed in dry N2 at (i) 1000 °C/10sec (one-step annealing), (ii) 55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5a4e1b457fd4557698d8a971ad4c6aa
https://doi.org/10.1063/1.1395469
https://doi.org/10.1063/1.1395469
Publikováno v:
AIP Conference Proceedings.
Ion implantation has been a traditional and well-developed technique for junction formation in semiconductor devices for more than 30 years. However, now a big challenge to this technique is the high implant current and throughput at very low energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a540a1065617689003994ae4bd056f6
https://doi.org/10.1063/1.1395446
https://doi.org/10.1063/1.1395446
Publikováno v:
Applied Physics Letters. 60:1232-1234
Low‐temperature epitaxial growth of Si using a dichlorosilane‐hydrogen mixture in a hot‐wall reactor has been studied with respect to in situ predeposition oxide removal. With BF2+ or F+ ion implantation prior to the final substrate cleaning st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a8a4c80c797651908ffa7993f7be67f
https://doi.org/10.1063/1.107415
https://doi.org/10.1063/1.107415
Autor:
Irene Rusakova, Xinming Lu, Peiching Ling, Qinmian Li, Wei-Kan Chu, Lin Shao, Jianyue Jin, Quark Y. Chen, Jiarui Liu
Publikováno v:
MRS Proceedings. 610
GeB− Cluster ions have been used to effectively produce 0.65-2keV boron for low energy ion implantation. We have generated the GeB− cluster ions using the SNICS ion source (source of negative ion by cesium sputtering). Shallow junctions have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1377671e219507cffca612b31e5adc26
https://doi.org/10.1557/proc-610-b4.5
https://doi.org/10.1557/proc-610-b4.5
Publikováno v:
MRS Proceedings. 220
Low-temperature selective epitaxial growth (SEG) of silicon using a dichlorosilane-hydrogen mixture in an LPCVD hot-wall reactor has been discussed with respect to the wafer preparation and the deposition cycle. The surface morphology and the quality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2705662e21c377c1b8eb3531678e0b8
https://doi.org/10.1557/proc-220-353
https://doi.org/10.1557/proc-220-353