Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Pei-Yi Chiang"'
Autor:
Pei-Yi Chiang, 江珮儀
106
Nowadays, we use keywords to perform searches when sending texts, crawling the Net and finding data on the Internet, but the search engine does not consider the degree of matching with the user''s needs. In other words, the general keyword s
Nowadays, we use keywords to perform searches when sending texts, crawling the Net and finding data on the Internet, but the search engine does not consider the degree of matching with the user''s needs. In other words, the general keyword s
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/4427t8
Autor:
Pei-yi Chiang, 江姵儀
102
A three-dimensional numerical simulation has been performed to understand the motion of the melt flow, thermal field and oxygen distributions during the Czochralski silicon single crystal growth process under the influence of a transverse ma
A three-dimensional numerical simulation has been performed to understand the motion of the melt flow, thermal field and oxygen distributions during the Czochralski silicon single crystal growth process under the influence of a transverse ma
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/26192033905626159946
Autor:
Pei-Yi Chiang, 江珮儀
99
In this research, TiO2 was chosen as precursor, Ba(OH)2‧8H2O or Ba(NO3)2 as Ba2+ source and NaOH as alkali source to proceed hydrothermal synthesis of barium titanate at 220℃for 48 hours. The effect of NaOH concentration from 1 to 10M, th
In this research, TiO2 was chosen as precursor, Ba(OH)2‧8H2O or Ba(NO3)2 as Ba2+ source and NaOH as alkali source to proceed hydrothermal synthesis of barium titanate at 220℃for 48 hours. The effect of NaOH concentration from 1 to 10M, th
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/74983125935150979374
Autor:
Pei-Yi Chiang, 江佩宜
97
A novel heterojunction bipolar transistor (HBT) with an InGaAsSb base was proposed and demonstrated by this group in 2006.This novel transistor not only has low turn-on voltage and low offset voltage but also has excellent radio-frequency per
A novel heterojunction bipolar transistor (HBT) with an InGaAsSb base was proposed and demonstrated by this group in 2006.This novel transistor not only has low turn-on voltage and low offset voltage but also has excellent radio-frequency per
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/86709040056630082059
Autor:
Pei-yi Chiang, 江佩儀
93
In this thesis, we report the synthesis, characterization and mesomorphic properties of two novel series of new mesogenic derivatives based on 3-Alkoxy-6-[(4-alkoxy-2-hydroxy-phenylimino)- methyl]-benzene-1,2-diol 1 and metal complexes of 2,3
In this thesis, we report the synthesis, characterization and mesomorphic properties of two novel series of new mesogenic derivatives based on 3-Alkoxy-6-[(4-alkoxy-2-hydroxy-phenylimino)- methyl]-benzene-1,2-diol 1 and metal complexes of 2,3
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/61664267172775833612
Autor:
Pei-yi Chiang, 江佩宜
89
Asian muntjac or barking deer consists six known species; Muntiacus muntjak, M. reevesi, M. rooseveltorum, M. crinifrons, M. feae, and M. atherodes. The native endangered Formosan muntjac (M. reevesi micrurus) in Taiwan is classified as one o
Asian muntjac or barking deer consists six known species; Muntiacus muntjak, M. reevesi, M. rooseveltorum, M. crinifrons, M. feae, and M. atherodes. The native endangered Formosan muntjac (M. reevesi micrurus) in Taiwan is classified as one o
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/02025908066129906604
Publikováno v:
Journal of Crystal Growth. 452:6-11
A three-dimensional simulation model is used to study the oxygen concentration distribution in silicon crystal during the Czochralski growth process under a transverse uniform magnetic field. The flow, temperature, and oxygen concentration distributi
Publikováno v:
Poster Presentation.
This study was to test the filtration efficiency and breathing resistance of N95 respirators of different storage periods using the most penetrating particle size aerosol by automated filter tester (TSI, model 8130). quality factor (qf) was calculate
Publikováno v:
IEEE Transactions on Electron Devices. 57:3327-3332
DC electrical characteristics of a series of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) that are grown on InP by molecular beam epitaxy are reported and analyzed. The InGaAsSb base of the transistors leads to a type-I ba
Publikováno v:
IEEE Electron Device Letters. 31:1401-1403
The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density (KSURF) tha