Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Pei-Te Lin"'
Autor:
Pei-Te Lin, Jia-Wei Chang, Syuan-Ruei Chang, Zhong-Kai Li, Wei-Zhi Chen, Jui-Hsuan Huang, Yu-Zhen Ji, Wen-Jeng Hsueh, Chun-Ying Huang
Publikováno v:
Crystals, Vol 11, Iss 3, p 259 (2021)
Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer.
Externí odkaz:
https://doaj.org/article/5962842e446d411eb90ce163fbb0581b
Autor:
Pei-Te Lin, Chih-Ying Yu, Sin-Huei Ho, Shiuan-Wei Pan, Jyun-Siang Jhang, Yi-Xun Zhang, Yo-Lun Zhang, Tian-Tsz Hsieh, Hao-Chien Wang, Wen-Jeng Hsueh, Chun-Ying Huang
Publikováno v:
Journal of The Electrochemical Society. 170:037515
The photochemical activation process is a promising way to operate metal oxide gas sensors at room temperature. However, this technique is only used in n-type semiconductors. In this study, we report a highly stable p-type copper gallium oxide (CuGaO
Publikováno v:
Microelectronics Reliability. 139:114803
Autor:
Pei-Te Lin, Chun-Ying Huang
Publikováno v:
SSRN Electronic Journal.
Autor:
Pei-te Lin, 林培德
97
Purpose: The purpose of this study was to examine the effects of respiratory muscle training (RMT) on pulmonary functions (including FVC, FEV1, FEV1/ FVC, PEF, MVV) and maximal oxygen uptake of university male-students. Method: Twenty-nine he
Purpose: The purpose of this study was to examine the effects of respiratory muscle training (RMT) on pulmonary functions (including FVC, FEV1, FEV1/ FVC, PEF, MVV) and maximal oxygen uptake of university male-students. Method: Twenty-nine he
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/58241356443330915403
Autor:
Wei-Zhi Chen, Jia-Wei Chang, Wen-Jeng Hsueh, Chun-Ying Huang, Pei-Te Lin, Jui-Hsuan Huang, Syuan-Ruei Chang, Zhong-Kai Li, Yu-Zhen Ji
Publikováno v:
Crystals
Volume 11
Issue 3
Crystals, Vol 11, Iss 259, p 259 (2021)
Volume 11
Issue 3
Crystals, Vol 11, Iss 259, p 259 (2021)
Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer.
Publikováno v:
IEEE Transactions on Electron Devices. 66:3393-3398
The investigation of the heterojunction properties in InGaN-based light-emitting diodes (LEDs) is important to the development of LEDs, because charge carrier transport in the LED is governed by the junctions. In this paper, it is proven that the imp
Autor:
Qi-Yu Huang, Yu-Ru Liu, Yu-Chien Kuo, Po-Sheng Lee, Yu-Wun Huang, Chun-Ying Huang, Shan-Wen Lin, Pei-Te Lin, Fang-Chi Lo, Hao-Che Cheng
Publikováno v:
Organic Electronics. 68:212-217
IGZO-based Schottky diodes have applications in high-speed electronics. However, these devices generally require noble metals to form a Schottky contact, which was one of the problems for their early commercialization. This study demonstrates the suc
Autor:
Cing-Yuan Yan, Chiao-Li Chang, Yu-Syuan Lin, Jyh-Rong Gong, Wen-Chun Huang, Po-Chih Chang, Yu-Qian Lou, Pei-Te Lin, Chun-Ying Huang, Wen-Jeng Hsueh
Publikováno v:
Journal of Physics D: Applied Physics. 54:345107
Autor:
Tai-Yuan Lin, Chun-Ying Huang, Guan-Yu Lin, Feng-Hsuan Hsu, Cheng-Ping Chou, Zi-Ling Huang, Jyh-Rong Gong, Pei-Te Lin, Yen-Yang Liu, Pei-Chun Liao, Yu-Hsiang Peng
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:057001
In this study, a series of β-Ga2O3 films are prepared by using triethylgallium (TEGa) and nitrous oxide (N2O) as precursors to explore the effect of N2O/TEGa ratio on the characteristics of β-Ga2O3 films. A metal/semiconductor/metal (MSM)-type sola