Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Pei-Jun Ding"'
Autor:
Wei Wang, Qingming Lu, Pei-Jun Ding, Zheng-Gang Yu, Bo-Rong Shi, William A. Lanford, Ke-Ming Wang
Publikováno v:
Journal of Physics D: Applied Physics. 31:2191-2194
40 keV, 50 keV and 60 keV were implanted at and into potassium titanyl phosphate ( or KTP). The depth of distribution of in was measured by the H(C nuclear reaction. The depth distributions obtained are compared with TRIM (transport of ions in matter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf40da1568c9add41357f66e3c113760
https://doi.org/10.1088/0022-3727/31/17/018
https://doi.org/10.1088/0022-3727/31/17/018
Publikováno v:
Journal of Applied Physics. 83:4507-4512
Copper thin films were exposed to a dilute silane mixture at temperatures in the range of 190–363 °C. The resulting silicide surface layers were characterized by four-point probe, Rutherford backscattering spectrometry, and x-ray diffraction. A de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e77b92a8301fc5f4ec17426238379b4
https://doi.org/10.1063/1.367235
https://doi.org/10.1063/1.367235
Publikováno v:
Chemical Engineering Communications. :253-259
Annealed thin films of Cu/Mg/SiO2 are studied as possible conductors for microelectronics. Rutherford backscattering and sheet resistance measurements show that vacuum annealing at 350-400°C results in transport of Mg from the buried layer to the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa1fe4c3c07e1cb8fe26aa6f360860d2
https://doi.org/10.1080/00986449608936566
https://doi.org/10.1080/00986449608936566
Publikováno v:
Materials Science and Engineering: B. 39:133-137
Xe ions at energies from 50 to 400 keV as well as from 600, 800 and 1000 keV were implanted into Si and Si1N1.375H0.603, respectively. The mean projected ranges and range stragglings are measured by Rutherford backscattering of MeV He ions. The value
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c53d7307bdee3cb060e844c0f5b839f7
https://doi.org/10.1016/0921-5107(95)01536-1
https://doi.org/10.1016/0921-5107(95)01536-1
Publikováno v:
Canadian Journal of Physics. 72:550-553
200 keV Hg and 1000 keV Xe ions were implanted into LiNbO3 and KTiOPO4 at a tilted angle. The depth distributions of Hg and Xe ions in LiNbO3 and KTiOPO4 were measured by Rutherford backscattering of MeV He ions. The experimental ion distributions ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cae51403bffcf0cab861d595777b783
https://doi.org/10.1139/p94-069
https://doi.org/10.1139/p94-069
Autor:
Pei-Jun Ding, Wei Wang, Zheng-Gang Yu, Bo-Rong Shi, Qingming Lu, William A. Lanford, Ke-Ming Wang
Publikováno v:
Journal of Applied Physics. 76:2104-2108
600–1200 keV Xe+ were implanted into KTiOPO4 (potassium titanyl phosphate) in increments of 100 keV. The depth distributions of implanted Xe+ in KTiOPO4 were measured by Rutherford backscattering. The effects of channeling, temperature, and dose on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c165c902c8a6d601340171a0a503467
https://doi.org/10.1063/1.357621
https://doi.org/10.1063/1.357621
Publikováno v:
Journal of Applied Physics. 75:3627-3631
The properties of thin films of Cu with 1 at. % Al are explored. As‐deposited films of Cu(1 at. % Al) oxidize orders of magnitude more slowly than do those of pure Cu. After Cu(1 at. % Al) films are annealed in Ar at 400 °C for 30 min, very thin p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2b34b12c5dbbb04a2baf56c283c7cad
https://doi.org/10.1063/1.356075
https://doi.org/10.1063/1.356075
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 85:260-263
Ion implantation is an effective way to passivate copper films. The present work was designed to refine our understanding of the mechanisms which lead to this result. The oxidation of B implanted copper and copper oxide (Cu2O) was studied. It was fou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5e4a3de5c1b7c7c88f4bf9a60dd357
https://doi.org/10.1016/0168-583x(94)95823-8
https://doi.org/10.1016/0168-583x(94)95823-8
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 85:167-170
The use of the Albany MeV rastered microbeam to study lateral diffusion of interest to microelectronics is discussed. As an illustration of this technique, a study is presented of the lateral transport that occurs near the edge of a Ni film deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62ed3843eef3ccce214bd33bac114833
https://doi.org/10.1016/0168-583x(94)95807-6
https://doi.org/10.1016/0168-583x(94)95807-6
Publikováno v:
Journal of Applied Physics. 74:1331-1334
Ion implantation can be used effectively to passivate copper. The effect of B ion implantation on the oxidization rate of copper is studied as a function of B energy and dose. The increase of sheet resistance associated with ion implantation damage a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf9e570214a053b7f66fbcace24f21c8
https://doi.org/10.1063/1.354913
https://doi.org/10.1063/1.354913