Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Pei-Fen Chou"'
Autor:
Pei-Fen Chou, 周培芬
81
Shallow p-n junctions have been fabricated by implanting BF //2+ ions and P+ ions into Pd silicide (ITS) or Pd metal (ITM) and subsequently annealing at various temperatures in N//2 ambient. The implantation conditions are selected that the d
Shallow p-n junctions have been fabricated by implanting BF //2+ ions and P+ ions into Pd silicide (ITS) or Pd metal (ITM) and subsequently annealing at various temperatures in N//2 ambient. The implantation conditions are selected that the d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/66125823962876064546
Autor:
S.F. Corcoran, S.B. Patel, Johann L. Dr. Maul, Pei-Fen Chou, Mark Dowsett, Richard J. H. Morris, G. A. Cooke, H. Kheyrandish
Publikováno v:
Applied Surface Science. :500-503
In this paper we demonstrate the use of red laser illumination to stimulate charge carriers in semiconductor layers with very low residual carrier densities, to eliminate surface potential changes during SIMS depth profiling. We show that very simple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::369d101fbc80df48dc2bffea74f5575e
https://doi.org/10.1016/s0169-4332(02)00765-1
https://doi.org/10.1016/s0169-4332(02)00765-1
Autor:
Zhen-Cheng Wu, Ren Guay Wu, Yu Lin Liu, Bing-Yue Tsui, Pei-Fen Chou, Zhi-Wen Shiung, S.M. Jang, Weng Chang, Mao-Chieh Chen, C.H. Yu, C.C. Wang, Kuo-Lung Fang, M.S. Liang
Publikováno v:
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).
Electrical reliability issues of two organic aromatic low-K materials (K 2.6/spl sim/2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e34e6492607813b9845a00a5255b73d
https://doi.org/10.1109/iitc.2000.854289
https://doi.org/10.1109/iitc.2000.854289
Autor:
Mao-Chieh Chen, Pei-Fen Chou, Zhi-Wen Shiung, Shwang-Ming Jeng, Zhen-Cheng Wu, Syun-Ming Jang, Chen-Hua Yu, Wei-Hao Wu, Chiu-Chih Chiang, Weng Chang, Mong-Song Liang
Publikováno v:
Journal of The Electrochemical Society. 148:F127
This work investigates the physical and electrical properties of two species of inorganic C-doped low dielectric constant (low-k) chemical vapor deposited (CVD) organosilicate glasses (OSGs, α-SiCO:H). They are both deposited by plasma-enhanced CVD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8961158a77f606eb4f3aa9f1e9a768e
https://doi.org/10.1149/1.1369373
https://doi.org/10.1149/1.1369373
Autor:
Zhen-Cheng Wu, Shwang-Ming Jeng, Chen-Hua Yu, Mao-Chieh Chen, Weng Chang, Syun-Ming Jang, Pei-Fen Chou, Chiu-Chih Chiang, Wei-Hao Wu, Zhi-Wen Shiung, Mong-Song Liang
Publikováno v:
Journal of The Electrochemical Society. 148:F115
This work compares the physical and electrical properties of two species of inorganie low dielectric constant (low-k) chemical vapor deposited (CVD) oxides, F-doped fluorinated silicate glass (FSG, k = 3.5) and C-doped organosilicate glass (OSG, k -
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::224cee3a63c3496dd2bcfc83acf0d954
https://doi.org/10.1149/1.1368108
https://doi.org/10.1149/1.1368108
Autor:
Zhen Cheng Wu, Mao-Chieh Chen, Ren Guay Wu, C.H. Yu, Syun Ming Jang, Zhi Wen Shiung, Mong-Song Liang, Pei Fen Chou, Weng Chang, Wei Hao Wu, Yu Lin Liu, Bing-Yue Tsui
Publikováno v:
Journal of The Electrochemical Society. 148:F109
This work investigates the dielectric and barrier properties of two species of organic aromatic low dielectric constant (low-k) polymers, namely, FLARE and SiLK. Experimental results indicate that both of the low-k polymers exhibit acceptable thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a395130ec6c3f9d9160c9af2668829ee
https://doi.org/10.1149/1.1368107
https://doi.org/10.1149/1.1368107
Publikováno v:
Japanese Journal of Applied Physics. 33:3402
Excellent silicided shallow p+n junctions have been successfully achieved by the implantation of BF2 + ions into thin Pd films on a Si substrate to a dose of 5×1015 cm-2 and subsequent low-temperature (as low as 500° C) furnace annealing. The forme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::536c235dbbdd9fd7b44b861d4dbb0968
https://doi.org/10.1143/jjap.33.3402
https://doi.org/10.1143/jjap.33.3402
Publikováno v:
Japanese Journal of Applied Physics; June 1994, Vol. 33 Issue: 6 p3402-3402, 1p