Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement

Autor: Eric M. Gullikson, Pei-yang Yan, Markus P. Benk, Kenneth A. Goldberg, Guojing Zhang

Publikováno v: Yan, Pei-Yang; Zhang, Guojing; Gullikson, Eric, M.; Goldberg, Kenneth, A.; & Benk, Markus, P.(2017). Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement:. Proc. SPIE, 9422. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/0jm1n133

Extreme ultraviolet lithography (EUVL) mask multi-layer (ML) blank surface roughness specification historically comes from blank defect inspection tool requirement. Later, new concerns on ML surface roughness induced wafer pattern line width roughnes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cada186e5db1a74512ccb98a1e26bed2
http://www.escholarship.org/uc/item/0jm1n133

Experimental Investigations of Protection Schemes for Extreme Ultraviolet Lithography Masks in Carrier Systems Against Horizontal Aerosol Flow

Autor: Christof Asbach, Se-Jin Yook, Thomas Engelke, David Y.H. Pui, Jung Hyeun Kim, Heinz Fissan, T. van der Zwaag, Pei-Yang Yan

Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 20:176-186

In extreme ultraviolet lithography (EUVL), conventional pellicles are unavailable for protecting the EUVL masks, since they highly absorb the EUV radiation. One of the serious challenges is therefore to prevent particulate contamination of the EUVL m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9f227336e1b1f02c378bfbc44c997f0
https://doi.org/10.1109/tsm.2007.895213

Protection schemes for critical surface in vacuum environments

Autor: Pei Yang Yan, Kevin J. Orvek, David Y.H. Pui, A. Ramamoorthy, Christof Asbach, Se-Jin Yook, Jung Hyeun Kim, Heinz Fissan

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1319-1324

This article presents a study of particle formation during vacuum pump down and methods that can be incorporated to protect critical surfaces (like semiconductor wafers or masks) from those particles. Particle formation during pump down was reexamine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28ba26396cb173370ff24a44770fd775
https://doi.org/10.1116/1.1978890

The relationships of exercise motivation, involvement,and well-being of the elderly

Autor: Pei-Yang Yan, 顏珮仰

101
Along with the technological development of medicine, mankind has placed greater attention on diet and regimen as well as health care so the life span of man-kind has gradually been elongated. In addition, the dramatic decrease of birth-rate

Externí odkaz: http://ndltd.ncl.edu.tw/handle/62421177182843395516

EUVL multilayer mask blank defect mitigation for defect-free EUVL mask fabrication

Autor: Marilyn Kamna, Pei-yang Yan, Robert J. Chen, Fabian C. Martinez, Yan Liu, Guojing Zhang

Publikováno v: SPIE Proceedings.

For Extreme Ultra-violet Lithography (EUVL) targeting at 11nm and beyond design rules, the minimum printable EUVL multilayer (ML) mask defect size can be as small as 20-25nm. As a result, the defect-free EUVL ML mask blank fabrication remains the top

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::670c3329fbb4a32b5558332d1eb0a320
https://doi.org/10.1117/12.927018