Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Pei Ling Cheang"'
Autor:
Ah Heng You, Pei Ling Cheang
Publikováno v:
Journal of Engineering Technology and Applied Physics, Vol 1, Iss 1, Pp 18-23 (2019)
A general supercapacitor model is developed by incorporating the effective surface area in the presence of pores. An analytical solution has been derived from the generic equation in Laplace domain based on the porous-electrode theory. This model dem
Externí odkaz:
https://doaj.org/article/97bb89e0ec664198a8ec39f23ffc0efc
Publikováno v:
Journal of Electrochemical Science and Technology. 12:217-224
In this study, Monte Carlo (MC) simulation is conducted with recurrence relation to study the effect of SiO2 with different particle size and their roles in enhancing the ionic conductivity and lithium transference number of PMMA composite polymer el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22beb804a712c06c691d2dd413920fc1
https://doi.org/10.33961/jecst.2020.01459
https://doi.org/10.33961/jecst.2020.01459
Publikováno v:
Optical and Quantum Electronics. 53
A Monte Carlo model using random ionization path lengths describing the carriers quantum transport in thin gallium nitride/silicon carbide (GaN/4H-SiC) heterojunction avalanche photodiodes (HAPDs) for ultraviolet detection is developed. This work sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a48a9478acfe48410ae23ec2b8bb8418
https://doi.org/10.1007/s11082-021-03213-2
https://doi.org/10.1007/s11082-021-03213-2
Publikováno v:
International Journal of Recent Technology and Engineering. 8:88-93
The Monte Carlo (MC) simulation of the carrier transport mechanisms including impact ionization at high electric field in GaN is presented. Two non-parabolic conduction and valence bands were considered for the simulation of transport properties of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a73d28cfeeb5ff80539433edc687c18
https://doi.org/10.35940/ijrte.c1017.1083s19
https://doi.org/10.35940/ijrte.c1017.1083s19
Publikováno v:
The European Physical Journal Applied Physics. 92:10301
In this work, Monte Carlo model is developed to investigate the avalanche characteristics of GaN and Al0.45Ga0.55N avalanche photodiodes (APDs) using random ionization path lengths incorporating dead space effect. The simulation includes the impact i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9165172ad9f3e4ecd46e82ca285eabfe
https://doi.org/10.1051/epjap/2020200067
https://doi.org/10.1051/epjap/2020200067
Publikováno v:
Computational Materials Science. 106:59-63
The ionic conductivities and current densities of PEO electrolytes with and without Al2O3 at various temperatures from 300 K to 353.35 K are presented in this work. The conductivity of PEO electrolyte with Al2O3 increases an order from 1.400 × 10−
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8da6ef7fa5e0b813cef08744ebee5884
https://doi.org/10.1016/j.commatsci.2015.04.045
https://doi.org/10.1016/j.commatsci.2015.04.045
Publikováno v:
Japanese Journal of Applied Physics. 58:082001
A Monte Carlo model using random ionization path lengths describing the carriers quantum transport in thin gallium nitride (GaN) avalanche photodiodes (APDs) for ultraviolet detection in industry is developed. This work simulated avalanche characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe033f6309d7a0f0ea3c6e91c72cb02
https://doi.org/10.7567/1347-4065/ab2e17
https://doi.org/10.7567/1347-4065/ab2e17
Publikováno v:
Journal of Polymer Engineering. 33:713-719
A Monte Carlo (MC) model to incorporate the effect of Al2O3 with different particle sizes in enhancing the ionic conductivity of composite polymer electrolytes consisting of polyethylene oxide (PEO), lithium trifluoromethanesulfonate (LiCF3SO3), and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba2e7d1261bf0b5ae4deca7b230bb8aa
https://doi.org/10.1515/polyeng-2013-0147
https://doi.org/10.1515/polyeng-2013-0147
Publikováno v:
Journal of Computational Electronics. 9:42-48
A double heterojunction avalanche photodiode (DHAPD) model using Monte Carlo (MC) method is applied to study the effect of dead space on excess noise factor. The mean multiplication gain and excess noise factor involving electron and hole impact ioni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db18852013939d407a0ea4d1b14abfeb
https://doi.org/10.1007/s10825-009-0303-1
https://doi.org/10.1007/s10825-009-0303-1