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Multi-Convergence-Angle Ptychography with Simultaneous Strong Contrast and High Resolution

Autor: Mao, Wei, Zhang, Weiyang, Huang, Chen, Zhou, Liqi, Kim, Judy. S., Gao, Si, Lei, Yu, Wu, Xiaopeng, Hu, Yiming, Pei, Xudong, Fang, Weina, Liu, Xiaoguo, Song, Jingdong, Fan, Chunhai, Nie, Yuefeng, Kirkland, Angus. I., Wang, Peng

Advances in bioimaging methods and hardware facilities have revolutionised the determination of numerous biological structures at atomic or near-atomic resolution. Among these developments, electron ptychography has recently attracted considerable at

Externí odkaz: http://arxiv.org/abs/2403.16902

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Oxidation kinetics and non-Marcusian charge transfer in dimensionally confined semiconductors

Autor: Xu, Ning, Shi, Li, Pei, Xudong, Zhang, Weiyang, Chen, Jian, Han, Zheng, Samorì, Paolo, Wang, Jinlan, Wang, Peng, Shi, Yi, Li, Songlin

Publikováno v: Nature Communications, 14, 4074 (2023)

Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substances can be well described by the classical Marcus-Gerischer charge trans

Externí odkaz: http://arxiv.org/abs/2307.08957

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Unraveling Intertwined Impacts between Lattice Vacancy and Substrate on Photonic Quasiparticles in Monolayer MoS$_2$

Autor: Xu, Ning, Hong, Daocheng, Pei, Xudong, Zhou, Jian, Wang, Fengqiu, Wang, Peng, Tian, Yuxi, Shi, Yi, Li, Songlin

Publikováno v: ACS Photonics, 9, 3404 (2022)

Lattice defects and interfacial absorbates represent two extrinsic but ubiquitous factors that exert profound impacts on the luminescent properties of semiconductors. However, their impacts are normally tangled and remain to be separately elucidated.

Externí odkaz: http://arxiv.org/abs/2307.00018

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Noninvasive Photodelamination of van der Waals Semiconductors for High-Performance Electronics

Autor: Xu, Ning, Pei, Xudong, Qiu, Lipeng, Zhan, Li, Wang, Peng, Shi, Yi, Li, Songlin

Publikováno v: Advanced Materials, 35, 2300618 (2023)

Atomically thin two-dimensional (2D) van der Waals semiconductors are promising candidate materials for post-silicon electronics. However, it remains challenging to attain completely uniform monolayer semiconductor wafers free of over-grown islands.

Externí odkaz: http://arxiv.org/abs/2306.13915

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4D-Explorer: A visual software for 4D-STEM data processing and image reconstruction

Autor: Hu, Yiming, Gao, Si, Wu, Xiaopeng, Pei, Xudong, Huang, Futao, Mao, Wei, Zhang, Weiyang, Horne, Aidan, Gu, Zhengbin, Wang, Peng

With the development of high-speed electron detectors, four-dimensional scanning transmission electron microscopy (4D-STEM) has emerged as a powerful tool for characterizing microstructures in material science and life science. However, the complexit

Externí odkaz: http://arxiv.org/abs/2306.08365

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