Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Peethala Cornelius Brown"'
Autor:
K. Sharma, Thomas J. Haigh, Dennis M. Hausmann, James J. Demarest, Peethala Cornelius Brown, Paul C. Lemaire, James Chingwei Li, Arpan Mahorowala, Hosadurga Shobha, Hsiang-Jen Huang, Balasubramanian S. Pranatharthi Haran, Son V. Nguyen, P. Ramani
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
AlOx was selectively deposited on top of SiCOH in 32 nm pitch Cu-SiCOH pattern to form a Fully Aligned Via (FAV) test structure. Selective deposition process performance and its integration into the 5nm BEOL FAV structure were evaluated. The selectiv
Autor:
Yongan Xu, Peethala Cornelius Brown, Hosadurga Shobha, Chanro Park, Huai Huang, Devika Sil, Pranita Kerber, Raghuveer R. Patlolla, David L. Rath, Clevenger Leigh Anne H, M. Ali, James Chingwei Li, Jae Gon Lee, Paul S. McLaughlin, Benjamin D. Briggs, Thomas J. Haigh, C. T. Le, G. Lian, Theodorus E. Standaert, Son Nguyen, Nicholas A. Lanzillo, Licausi Nicholas, Donald F. Canaperi, Elbert E. Huang, Errol Todd Ryan, Han You, Griselda Bonilla, James J. Demarest, Young-Wug Kim
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
A fully aligned via (FAV) integration scheme is introduced and demonstrated at 36 nm metal pitch, with extendibility to beyond the 7 nm node. Selective chemistries were developed to recess Cu and W wires and their associated barrier liner materials,