Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Peer Lehnen"'
Publikováno v:
Thin Solid Films. :345-349
Metal–insulator–metal (MIM) capacitors with high-k HfO2 dielectrics were fabricated and investigated. Experimental results show low leakage current densities of ∼5×10−9 A/cm2 and high capacitance density of ∼3.4 fF/μm2 at 100 kHz in the M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::651798dd3b689e0b282244f327f7456c
https://doi.org/10.1016/j.tsf.2004.08.148
https://doi.org/10.1016/j.tsf.2004.08.148
Autor:
Ming-Jui Yang, Ing-Jye Huang, Shih-Wen Shen, Chao-Hsin Chien, Peer Lehnen, Shih-Lu Hsu, Jiann Shieh, Tiao-Yuan Huang, Ching-Chich Leu
Publikováno v:
Electrochemical and Solid-State Letters. 8:C74-C76
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::809f29be810cc296f9be843c762acda4
https://doi.org/10.1149/1.1891625
https://doi.org/10.1149/1.1891625
Autor:
Ming-Jui Yang, Peer Lehnen, Tiao-Yuan Huang, Chao-Hsin Chien, Tsu-Hsiu Perng, Chun-Yen Chang, Ching-Wei Chen
Publikováno v:
IEEE Electron Device Letters. 25:784-786
Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO/sub 2/ dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO/sub 2/ dielectric were also fabricated for comparison
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11906a387c74446a29624a3cc8a58dfd
https://doi.org/10.1109/led.2004.839221
https://doi.org/10.1109/led.2004.839221
Autor:
Wen Tai Lu, Po Ching Lin, Tiao Yuan Huang, Ing Jyi Huang, Ming Jui Yang, Chao-Hsin Chien, Peer Lehnen
Publikováno v:
Applied Physics Letters. 85:3525-3527
The characteristics of charge trapping during constant voltage stress in an n-type metal–oxide–semiconductor capacitor with HfO2∕SiO2 gate stack and TiN gate electrode were studied. We found that the dominant charge trapping mechanism in the hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac184edc43cedeb7203bdb6202775926
https://doi.org/10.1063/1.1808228
https://doi.org/10.1063/1.1808228
Autor:
Ching-Chich Leu, Ding-Yeong Wang, Shiow-Huey Chuang, Chao-Hsin Chien, Peer Lehnen, Tiao-Yuan Huang, C.Y. Chang, Ming-Jui Yang
Publikováno v:
IEEE Electron Device Letters. 24:553-555
Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 390-nm-thick SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) ferroelectric film and 8-nm-thick hafnium oxide (HfO/sub 2/) layer on silicon substrate have been fabricated and characterized. It is d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a19423164ecf6c3ac3d2111e9b093eaf
https://doi.org/10.1109/led.2003.816582
https://doi.org/10.1109/led.2003.816582
Autor:
Sven Van Elshocht, An Hardy, S. De Gendt, Christophe Adelmann, David P. Brunco, Matty R. Caymax, Thierry Conard, Pietro Delugas, Peer Lehnen, Denis Shamiryan, Rita Vos, Thomas Witters, Paul Zimmerman, Marc M. Meuris, Marc M. Heyns
The semiconductor industry is facing the challenging task of finding a candidate to replace silicon oxide, which has been the CMOS gate dielectric of choice for more than 50 years. A material with a dielectric constant (k) higher than SiO2 will allow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a1a77c925bd171af22579d4ee83f2ca
http://hdl.handle.net/1942/1386
http://hdl.handle.net/1942/1386
Autor:
H. Haselier, Markus Schumacher, Reji Thomas, Peer Lehnen, Rainer Waser, S. Regnery, Stefan Miedl, Peter Ehrhart
Publikováno v:
MRS Proceedings. 811
SrTa2O6 thin films with thickness between 6 and 150nm were deposited in a multi-wafer planetary MOCVD reactor combined with a TRIJET® liquid delivery system using a single source precursor, strontium-tantalum-(methoxyethoxy)-ethoxide dissolved in to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42da0d2c194d0787a594216228cbf2a6
https://doi.org/10.1557/proc-811-d9.7
https://doi.org/10.1557/proc-811-d9.7
Autor:
C.Y. Chang, Ding-Yeong Wang, Chao-Hsin Chien, Tiao-Yuan Huang, Peer Lehnen, Shiow-Huey Chuang, Ming-Jui Yang, Ching-Chich Leu
Publikováno v:
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::168bce3f25b5a9cd33c59a8aebdb5779
https://doi.org/10.7567/ssdm.2003.p10-5
https://doi.org/10.7567/ssdm.2003.p10-5
Autor:
Michael Heuken, Ulrich Weber, Peer Lehnen, Peter K. Baumann, Yoshi Senzaki, Johannes Lindner, Brian Lu, Ziaul Karim
Publikováno v:
ECS Meeting Abstracts. :929-929
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::905f30d884ca243432a362955c50a9b2
https://doi.org/10.1149/ma2010-01/17/929
https://doi.org/10.1149/ma2010-01/17/929
Autor:
Zia Karim, Ghassan Barbar, Olivier Boissière, Peer Lehnen, Christoph Lohe, Tom Seidel, Christoph Adelmann, Thierry Conard, Barry O'Sullivan, Lars-Aåke Ragnarsson, Sven Van Elshocht, Stefan De Gendt
Publikováno v:
ECS Meeting Abstracts. :1164-1164
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3db6c7dd4c4c0e0e0c17724e503c857f
https://doi.org/10.1149/ma2007-02/20/1164
https://doi.org/10.1149/ma2007-02/20/1164