Zobrazeno 1 - 10 of 17 pro vyhledávání: '"Pedro Martín-Holgado"'
1
Akademický článek
A Machine Learning Approach to Predict Radiation Effects in Microelectronic Components
Autor: Fernando Morilla, Jesús Vega, Sebastián Dormido-Canto, Amor Romero-Maestre, José de-Martín-Hernández, Yolanda Morilla, Pedro Martín-Holgado, Manuel Domínguez
Publikováno v: Sensors, Vol 24, Iss 13, p 4276 (2024)
This paper presents an innovative technique, Advanced Predictor of Electrical Parameters, based on machine learning methods to predict the degradation of electronic components under the effects of radiation. The term degradation refers to the way in
Externí odkaz: https://doaj.org/article/96365e2435c74da1906625719088fec6
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2
Akademický článek
Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs
Autor: Enrique Maset, Pedro Martín-Holgado, Yolanda Morilla, David Gilabert, Esteban Sanchis-Kilders, Pedro J. Martínez
Publikováno v: Applied Sciences, Vol 12, Iss 22, p 11578 (2022)
Dynamic RON is a key parameter in terms of device reliability and the efficiency of power-switching converters. In this study, commercial off-the-shelf GaN-on-Si power high-electron-mobility transistors (HEMTs) were irradiated using different regimes
Externí odkaz: https://doaj.org/article/0dea0a0552d04ac4a16f15a3959d7987
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3
Akademický článek
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
Autor: Pedro J. Martínez, Enrique Maset, Pedro Martín-Holgado, Yolanda Morilla, David Gilabert, Esteban Sanchis-Kilders
Publikováno v: Materials, Vol 12, Iss 17, p 2760 (2019)
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where
Externí odkaz: https://doaj.org/article/c9960c65abb24a6b9a7268dd64427395
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4
Analyzing Scaled Reduced Precision Redundancy for Error Mitigation Under Proton Irradiation
Autor: Luis Ángel García Astudillo, ALMUDENA LINDOSO, Luis Entrena, HONORIO MARTIN, PEDRO MARTÍN-HOLGADO, Mario García Valderas
Publikováno v: IEEE Transactions on Nuclear Science. 69:1485-1491
Reduced precision redundancy (RPR) is an alternative to triple modular redundancy (TMR) that reduces the area overhead at the expense of minor accuracy loss in case of error. In this work, we propose a Scaled RPR approach for multistage circuits and
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::416268fdff999e14b61109adef3e8b97
https://doi.org/10.1109/tns.2022.3147599
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5
Hybrid Lockstep Technique for Soft Error Mitigation
Autor: ALMUDENA LINDOSO, Alejandro Serrano Cases, Antonio Martínez-Álvarez, Sergio Cuenca-Asensi, Luis Entrena, Yolanda Morilla, M. Peña-Fernandez, PEDRO MARTÍN-HOLGADO
Publikováno v: IEEE Transactions on Nuclear Science. 69:1574-1581
This work presents the evaluation of a new dual-core lockstep hybrid approach aimed to improve the fault tolerance in microprocessors. Our approach takes advantage of modern multicore processor resources to combine software-based lockstep with a cust
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87c446ecd820c4110e523ede63849f13
https://doi.org/10.1109/tns.2022.3149867
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7
Analyzing Reduced Precision Triple Modular Redundancy under Proton Irradiation
Autor: Luis Ángel García Astudillo, ALMUDENA LINDOSO, Luis Entrena, HONORIO MARTIN, PEDRO MARTÍN-HOLGADO, Mario García Valderas
Publikováno v: Digital.CSIC. Repositorio Institucional del CSIC
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This work analyzes the performance of the reduced precision redundancy (RPR) error mitigation technique using the fast Fourier transform (FFT) as a case study. To this purpose, several configurations of an FFT IP design were implemented in field-prog
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c83b3d995e72150f1b05ce204d908248
http://hdl.handle.net/10261/278073
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