Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Pedro M. Tome"'
Autor:
Pedro M. Tome, Telmo R. Cunha, Filipe M. Barradas, Joao L. Gomes, Jose C. Pedro, Luis C. Nunes
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 69:529-540
Charge-trapping phenomena in radio-frequency (RF) power amplifiers (PAs) based on GaN high-electron-mobility transistor (HEMT) technology are understood to be responsible for the dynamic self-biasing behavior that leads to a seemingly intractable slo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::436b9955ff89abaabbfdf38346e76a63
https://doi.org/10.1109/tmtt.2020.3006290
https://doi.org/10.1109/tmtt.2020.3006290
Publikováno v:
IEEE Transactions on Vehicular Technology. 69:13112-13123
High-resolution delay-Doppler estimation is an important requirement for automotive radar systems, especially in multi-target scenarios that require better target separation performance. Orthogonal frequency-division multiplexing (OFDM) is a promisin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af25287feb2df1116592490e5895947c
https://doi.org/10.1109/tvt.2020.3021338
https://doi.org/10.1109/tvt.2020.3021338
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 68:3709-3723
In this article, we present an analog circuit for the compensation of long-term memory effects in power amplifiers (PAs) based on GaN high-electron-mobility transistors (HEMTs). The analog compensation circuit (ACC) is supported on a charge-trapping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3eef2fc6d70e3658c19a93b16224e1e
https://doi.org/10.1109/tmtt.2020.3007713
https://doi.org/10.1109/tmtt.2020.3007713
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 67:5249-5256
Pulsed radar amplifiers are known to present severe long-term memory effects in their pulse-to-pulse stability. These are usually attributed to electrothermal dynamics or to trapping effects originated in gallium-nitride (GaN) HEMTs. Expanding on our
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08cd6890fcd51ad1d413bb18b304986a
https://doi.org/10.1109/tmtt.2019.2940185
https://doi.org/10.1109/tmtt.2019.2940185
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 67:288-294
In this paper, we describe a hybrid analog/digital linearization scheme for GaN high-electron-mobility transistor (HEMT)-based power amplifiers that consists of a novel analog feedforward circuit and a conventional generalized memory polynomial (GMP)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd14fce372869800c4d46fe592f6fdab
https://doi.org/10.1109/tmtt.2018.2880911
https://doi.org/10.1109/tmtt.2018.2880911
Autor:
Filipe M. Barradas, Joao L. Gomes, Pedro M. Tome, Pedro M. Cabral, Telmo R. Cunha, Jose C. Pedro, Luis C. Nunes
Publikováno v:
2021 IEEE MTT-S International Wireless Symposium (IWS).
This work is an overview of the current understanding of memory effects arising from AlGaN/GaN HEMT based RF power amplifiers. It reviews the most widely accepted physical sources of those memory effects and their impact on the amplifier's linearizab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96831ab46bacd788d6d4af31954ce645
https://doi.org/10.1109/iws52775.2021.9499373
https://doi.org/10.1109/iws52775.2021.9499373
Autor:
Filipe M. Barradas, Telmo R. Cunha, Luis C. Nunes, Joao L. Gomes, Jose C. Pedro, Pedro M. Tome
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
In this paper we propose an experimental method for the characterization and extraction of the time constants associated with the charge capture and emission processes of electron-trapping phenomena observed in radio-frequency (RF) power amplifiers (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b33af35a4ff524411dbc9c197d0f6af4
https://doi.org/10.1109/ims30576.2020.9223802
https://doi.org/10.1109/ims30576.2020.9223802
Autor:
Filipe M. Barradas, Telmo R. Cunha, Pedro M. Cabral, Pedro M. Tome, Jose C. Pedro, Jose M. Gomes
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:5284-5297
Modern and future transmitter architectures are being driven toward multi-input multi-output (MIMO) transceivers, which make use of several radio frequency (RF) power amplifiers (PAs) to drive an antenna array. When moving to high integration scenari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9be26a461cddc659659cb3aa31a4f023
https://doi.org/10.1109/tmtt.2017.2766067
https://doi.org/10.1109/tmtt.2017.2766067
Publikováno v:
2019 IEEE MTT-S International Microwave Symposium (IMS).
In this paper we describe a method for compensating the pulse-to-pulse instability of GaN high-electron-mobility transistor (HEMT)-based power amplifiers (PAs) caused by electron-trapping effects. The method consists in generating a compensation sign
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0dfdfae57809208af6d06316a9bdc9c
https://doi.org/10.1109/mwsym.2019.8700957
https://doi.org/10.1109/mwsym.2019.8700957