Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Pedro J. Garcia-R"'
Autor:
Gabriela A. Rodriguez-Ruiz, Edmundo A. Gutierrez-D, L. Arturo Sarmiento-Reyes, Zlatan Stanojevic, Hans Kosina, Fernando J. Guarin, Pedro J. Garcia-R
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 2, Pp 78-84 (2015)
A numerical simulation methodology for incorporating thermo-magnetic effects on the MOSFET gate tunneling current is introduced. The methodology is based on the solution of the Schrödinger-Poisson coupled system, which allows simulating the influen
Externí odkaz:
https://doaj.org/article/766d204d753a4d96b950974102db273e
Autor:
Edmundo A. Gutiérrez-D
The rapid evolution of integrated circuit technology has brought with it many new materials and processing steps at the nano-scale which boost the electrical performance of devices, resulting in faster and more functionally-complex electronics. Howev
