Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Pedro Fernandes Paes Pinto Rocha"'
Autor:
Pedro Fernandes Paes Pinto Rocha, Mohammed Zeghouane, Sarah Boubenia, Franck Bassani, Laura Vauche, Eugénie Martinez, William Vandendaele, Marc Veillerot, Bassem Salem
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Electrical and material properties of plasma‐enhanced atomic layer deposited (PE‐ALD) AlON on dry‐etched n‐type GaN substrates are investigated for nitrogen concentration ranging from 1.5% to 7.1%. Firstly, an increase in flat‐band
Externí odkaz:
https://doaj.org/article/157d1d245c404fd39733d1877f0c92da
Autor:
Mohammed Zeghouane, Pedro Fernandes Paes Pinto Rocha, Sarah Boubenia, Franck Bassani, Gauthier Lefevre, Sebastien Labau, Laura Vauche, Eugénie Martinez, Marc Veillerot, Bassem Salem
Publikováno v:
AIP Advances, Vol 13, Iss 8, Pp 085128-085128-8 (2023)
Homogeneous AlOxNy thin films with a controlled nitrogen composition, up to 7.1%, were grown on GaN substrate using plasma-enhanced atomic layer deposition. This was achieved through repeated cycles consisting of AlN thin layers deposition and subseq
Externí odkaz:
https://doaj.org/article/f45f5de4819e41a7ae8a0c4538f4dc0f
Autor:
Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, Julien Buckley
Publikováno v:
Energies, Vol 16, Iss 7, p 2978 (2023)
For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior. But fully
Externí odkaz:
https://doaj.org/article/970ddd43b794417cad17a8bc49e6528d
Autor:
Tarek Spelta, Eugenie Martinez, Marc Veillerot, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Bassem Salem, Bérangère Hyot
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a2d075ede910a7b16c59c2edc516cf6
https://doi.org/10.2139/ssrn.4343374
https://doi.org/10.2139/ssrn.4343374