Výsledky vyhledávání - "Pedro Fernandes Paes Pinto Rocha"

Akademický článek

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Autor: Pedro Fernandes Paes Pinto Rocha, Mohammed Zeghouane, Sarah Boubenia, Franck Bassani, Laura Vauche, Eugénie Martinez, William Vandendaele, Marc Veillerot, Bassem Salem

Publikováno v: Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)

Abstract Electrical and material properties of plasma‐enhanced atomic layer deposited (PE‐ALD) AlON on dry‐etched n‐type GaN substrates are investigated for nitrogen concentration ranging from 1.5% to 7.1%. Firstly, an increase in flat‐band

Externí odkaz: https://doaj.org/article/157d1d245c404fd39733d1877f0c92da

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Akademický článek

Synthesis of AlOxNy thin films using a two-step PE-ALD process

Autor: Mohammed Zeghouane, Pedro Fernandes Paes Pinto Rocha, Sarah Boubenia, Franck Bassani, Gauthier Lefevre, Sebastien Labau, Laura Vauche, Eugénie Martinez, Marc Veillerot, Bassem Salem

Publikováno v: AIP Advances, Vol 13, Iss 8, Pp 085128-085128-8 (2023)

Homogeneous AlOxNy thin films with a controlled nitrogen composition, up to 7.1%, were grown on GaN substrate using plasma-enhanced atomic layer deposition. This was achieved through repeated cycles consisting of AlN thin layers deposition and subseq

Externí odkaz: https://doaj.org/article/f45f5de4819e41a7ae8a0c4538f4dc0f

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Akademický článek

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Autor: Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, Julien Buckley

Publikováno v: Energies, Vol 16, Iss 7, p 2978 (2023)

For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior. But fully

Externí odkaz: https://doaj.org/article/970ddd43b794417cad17a8bc49e6528d

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Effect of Al2o3 Thickness and Oxidant Precursors on the Interface Composition and Contamination in Al2o3/Gan Structures

Autor: Tarek Spelta, Eugenie Martinez, Marc Veillerot, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Bassem Salem, Bérangère Hyot

Publikováno v: SSRN Electronic Journal.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a2d075ede910a7b16c59c2edc516cf6
https://doi.org/10.2139/ssrn.4343374

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Akademický článek

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors.

Autor: Fernandes Paes Pinto Rocha, Pedro^1,2 (AUTHOR) pedro.fernandespaespintorocha@cea.fr, Vauche, Laura¹ (AUTHOR) laura.vauche@cea.fr, Pimenta-Barros, Patricia¹ (AUTHOR) patricia.pimenta-barros@cea.fr, Ruel, Simon¹ (AUTHOR) simon.ruel@cea.fr, Escoffier, René¹ (AUTHOR) rene.escoffier@cea.fr, Buckley, Julien¹ (AUTHOR) julien.buckley@cea.fr

Publikováno v: Energies (19961073). Apr2023, Vol. 16 Issue 7, p2978. 28p.

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