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pro vyhledávání: '"Pedram Jahandar"'
Autor:
Maksym Myronov, Pedram Jahandar, Simone Rossi, Kevin Sewell, Felipe Murphy‐Armando, Fabio Pezzoli
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)
Abstract Efficient p‐ and n‐type in situ doping of compressively strained germanium tin (Ge1‐xSnx) semiconductor epilayers, grown by chemical vapor deposition on a standard Si(001) substrate, is demonstrated. Materials characterization results
Externí odkaz:
https://doaj.org/article/e43ddf7d5591425fa8992d874ae67648
Publikováno v:
Semiconductor Science & Technology; Mar2018, Vol. 33 Issue 3, p1-1, 1p