Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Pedram Jahandar"'
Autor:
Maksym Myronov, Pedram Jahandar, Simone Rossi, Kevin Sewell, Felipe Murphy‐Armando, Fabio Pezzoli
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)
Abstract Efficient p‐ and n‐type in situ doping of compressively strained germanium tin (Ge1‐xSnx) semiconductor epilayers, grown by chemical vapor deposition on a standard Si(001) substrate, is demonstrated. Materials characterization results
Externí odkaz:
https://doaj.org/article/e43ddf7d5591425fa8992d874ae67648
Autor:
Jahandar, Pedram, Myronov, Maksym
Publikováno v:
Journal of Semiconductors; Oct2024, Vol. 45 Issue 10, p1-7, 7p
Publikováno v:
Semiconductor Science & Technology; Mar2018, Vol. 33 Issue 3, p1-1, 1p
Autor:
Myronov, Maksym, Jahandar, Pedram, Rossi, Simone, Sewell, Kevin, Murphy‐Armando, Felipe, Pezzoli, Fabio
Publikováno v:
Advanced Electronic Materials; Sep2024, Vol. 10 Issue 9, p1-10, 10p