Zobrazeno 1 - 10
of 253
pro vyhledávání: '"Pedesseau L"'
Publikováno v:
Applied Surface Science, 161076, 2024
Here, we compare the stabilities of different III-V crystals configurations on stepped Si substrates, with or without anti-phase boundaries, for abrupt and compensated interfaces, using density functional theory. Thermodynamic stability of the differ
Externí odkaz:
http://arxiv.org/abs/2406.09476
Publikováno v:
Physical Review B, 109, 045304, 2024
Here, we quantitatively estimate the impact of the inevitable Si surface passivation prior to III-V/Si hetero-epitaxy on the surface energy of the Si initial substrate, and explore its consequences for the description of wetting properties. Density F
Externí odkaz:
http://arxiv.org/abs/2312.01412
Publikováno v:
Physical Review B, 108, 075305, 2023
Here, we quantitatively determine the impact of III-V/Si interface atomic configuration on the wetting properties of the system. Based on a description at the atomic scale using density functional theory, we first show that it is possible to determin
Externí odkaz:
http://arxiv.org/abs/2303.15566
Here, we comprehensively investigate the atomic structures and electronic properties of different antiphase boundaries in III-V semiconductors with different orientations and stoichiometries, including {110}, {100}, {111}, {112} and {113} ones, based
Externí odkaz:
http://arxiv.org/abs/2206.01571
Publikováno v:
EPJ Photovoltaics, Vol 8, p 85501 (2017)
The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are
Externí odkaz:
https://doaj.org/article/d0e4b1283db1437b9825c54157777e91
Vacancy ordered halide perovskites have been extensively investigated as promising lead-free alternatives to halide perovskites for various opto-electronic applications. Among these Cs$_{2}$TiBr$_{6}$ has been reported as a stable absorber with inter
Externí odkaz:
http://arxiv.org/abs/2109.04936
Autor:
Lucci, I., Charbonnier, S., Pedesseau, L., Vallet, M., Cerutti, L., Rodriguez, J. -B., Tournie, E., Bernard, R., Letoublon, A., Bertru, N., Corre, A. Le, Rennesson, S., Semond, F., Patriarche, G., Largeau, L., Turban, P., Ponchet, A., Cornet, C.
Publikováno v:
Phys. Rev. Materials 2, 060401 (2018)
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is
Externí odkaz:
http://arxiv.org/abs/1804.02358
Autor:
Kepenekian, M., Traore, B., Blancon, J. -C., Pedesseau, L., Tsai, H., Nie, W., Stoumpos, C. C., Kanatzidis, M. G., Even, J., Mohite, A. D., Tretiak, S., Katan, C.
Surface states are ubiquitous to semiconductors and significantly impact the physical properties and consequently the performance of optoelectronic devices. Moreover, surface effects are strongly amplified in lower dimensional systems such as quantum
Externí odkaz:
http://arxiv.org/abs/1801.00704
Autor:
Blancon, J. -C., Stier, A. V., Tsai, H., Nie, W., Stoumpos, C. C., Traoré, B., Pedesseau, L., Kepenekian, M., Tretiak, S., Crooker, S. A., Katan, C., Kanatzidis, M. G., Crochet, J. J., Even, J., Mohite, A. D.
Understanding the nature and energy distribution of optical resonances is of central importance in low-dimensional materials$^{1-4}$ and its knowledge is critical for designing efficient optoelectronic devices. Ruddlesden-Popper halide perovskites ar
Externí odkaz:
http://arxiv.org/abs/1710.07653
Autor:
Pedesseau, L., Chaix-Pluchery, O., Modreanu, M., Chaussende, D., Sarigiannidou, E., Rolland, A., Even, J., Durand, O.
Al4SiC4 is a wide band gap semiconductor with numerous potential technological applications. We report here the first thorough experimental Raman and Infrared (IR) investigation of vibrational properties of Al4SiC4 single crystals grown by high tempe
Externí odkaz:
http://arxiv.org/abs/1612.05575