Zobrazeno 1 - 10
of 385
pro vyhledávání: '"Peaker, A. R."'
Autor:
Coutinho, José, Gomes, Diana, Torres, Vitor J. B., Fattah, Tarek O. Abdul, Markevich, Vladimir P., Peaker, Anthony R.
Publikováno v:
Solar RRL 8, 2300639 (2024)
We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopants and carbon, which are relevant in the context of life-time degradati
Externí odkaz:
http://arxiv.org/abs/2402.00434
Autor:
Coutinho, José, Gomes, Diana, Torres, Vitor J. B., Fattah, Tarek O. Abdul, Markevich, Vladimir P., Peaker, Anthony R.
Publikováno v:
Physical Review B 108, 014111 (2023)
The thermodynamics of several reactions involving atomic and molecular hydrogen with group-III acceptors is investigated. The results provide a first-principles-level account of thermally- and carrier-activated processes involving these species. Acce
Externí odkaz:
http://arxiv.org/abs/2307.15633
Publikováno v:
Physica Status Solidi B 2022, 2100670
Hydrogen point defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for the condensation of atomic hydrogen into molecules in Si quenched from
Externí odkaz:
http://arxiv.org/abs/2204.13334
Autor:
Dawe, C. A., Markevich, V. P., Halsall, M. P., Hawkins, I. D., Peaker, A. R., Nandi, A., Sanyal, I., Kuball, M.
Publikováno v:
Journal of Applied Physics; 7/28/2024, Vol. 136 Issue 4, p1-8, 8p
Autor:
Sun, L., Kruszewski, P., Markevich, V. P., Dawe, C. A., Peaker, A. R., Crowe, I. F., Plesiewicz, J., Prystawko, P., Grzanka, Sz., Grzanka, E., Jakiela, R., Binks, D., Halsall, M. P.
Publikováno v:
Journal of Applied Physics; 5/7/2024, Vol. 135 Issue 17, p1-7, 7p
Publikováno v:
Journal of Physics: Condensed Matter 32, 323001 (2020)
This review aims at providing a retrospective, as well as a description of the state-of-the-art and future prospects regarding the theoretical and experimental characterisation of negative-U defects in semiconductors. This is done by complementing th
Externí odkaz:
http://arxiv.org/abs/2005.06447
Autor:
Abdul Fattah, Tarek O., Jacobs, Janet, Markevich, Vladimir P., Abrosimov, Nikolay V., Halsall, Matthew P., Crowe, Iain F., Peaker, Anthony R.
Publikováno v:
In Journal of Science: Advanced Materials and Devices December 2023 8(4)
Autor:
Abdul Fattah, Tarek O., Markevich, Vladimir P., Gomes, Diana, Coutinho, José, Abrosimov, Nikolay V., Hawkins, Ian D., Halsall, Matthew P., Peaker, Anthony R.
Publikováno v:
In Solar Energy Materials and Solar Cells 15 August 2023 259
Autor:
Capan, Ivana, Brodar, Tomislav, Coutinho, José, Ohshima, Takeshi, Markevich, Vladimir P., Peaker, Anthony R.
Publikováno v:
Journal of Applied Physics 124 (2018) 245701
We provide direct evidence that the broad Z$_{1/2}$ peak, commonly observed by conventional DLTS in as-grown and at high concentrations in radiation damaged $4H$-SiC, has two components, namely Z$_{1}$ and Z$_{2}$, with activation energies for electr
Externí odkaz:
http://arxiv.org/abs/1812.06462
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