Heteroepitaxy of Dirac semimetal Cd3As2 by metal-organic chemical-vapor deposition

Autor: Tait, C.R., Lee, S.R., Deitz, J.I., Rodriguez, M.A., Alliman, D.L., Gunning, B.P., Peake, G.M., Sandoval, A., Valdez, N.R., Sharps, P.R.

Publikováno v: In Journal of Crystal Growth 15 October 2021 572

OMVPE of GaAsSbN for long wavelength emission on GaAs

Autor: Peake, G.M. ^*, Waldrip, K.E., Hargett, T.W., Modine, N.A., Serkland, D.K.

Publikováno v: In Journal of Crystal Growth 2004 261(2):398-403

Polarization-dependent second harmonic diffraction from resonant GaAs metasurfaces

Autor: Löchner, F.J.F., Fedotova, A.N., Liu, S., Keeler, G.A., Peake, G.M., Saravi, S., Shcherbakov, M.R., Burger, S., Fedyanin, A.A., Brener, I., Pertsch, T., Setzpfandt, F., Staude, I.

Resonant semiconductor metasurfaces are an emerging versatile platform for nonlinear photonics. In this work, we investigate second-harmonic generation from metasurfaces consisting of two-dimensional square arrays of gallium arsenide nanocylinders as

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______610::6377e6e400932e4f56dd708ae9fdb6d1
https://publica.fraunhofer.de/handle/publica/260340

Characterization of thin GaAs films grown on nanostructured silicon substrates.

Autor: Sandoval, S.G., Khizar, M., Anderson, J., Manginell, R.P., Peake, G.M., Amin, N., Sopian, K., Rotter, T., Balakrishnan, G., Brueck, S.R.J., Zaidi, S.H.

Publikováno v: 2010 35th IEEE Photovoltaic Specialists Conference (PVSC); 2010, p002135-002138, 4p

Intracavity frequency-doubled electrically-injected VECSEL.

Autor: Esherick, P., Serkland, D.K., Geib, K.M., Peake, G.M., Crawford, M.H., Alford, W.J., Allerman, A.A.

Publikováno v: IEEE/LEOS Summer Topi All-Optical Networking: Existing & Emerging Architecture & Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical; 2002, pMF3-MF8, 11p