Zobrazeno 1 - 10
of 106
pro vyhledávání: '"Pešić, Milan"'
Autor:
Winkler, Felix, Pešić, Milan, Richter, Claudia, Hoffmann, Michael, Mikolajick, Michael, Bartha, Johann W.
So far, only CMOS compatible and scalable hafnia-zirconia (HZO) based ferroelectric (FE) n-FeFETs have been reported. To enable the full ferroelectric hierarchy [1] both p- and n-type devices should be available. Here we report a p-FeFET with a large
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A77564
https://tud.qucosa.de/api/qucosa%3A77564/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A77564/attachment/ATT-0/
Recently, the proposal to use voltage amplification from ferroelectric negative capacitance (NC) to reduce the power dissipation in nanoelectronic devices has attracted significant attention. Homogeneous Landau theory predicts, that by connecting a f
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A81337
https://tud.qucosa.de/api/qucosa%3A81337/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A81337/attachment/ATT-0/
With the discovery of the ferroelectric (FE) properties within HfO₂, the scaling gap between state-of-the-art technology nodes and non-volatile memories based on FE materials can be bridged. In addition to non-volatility, new memory concepts should
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A76709
https://tud.qucosa.de/api/qucosa%3A76709/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A76709/attachment/ATT-0/
Hafnium oxide is widely used for resistive switching devices, and recently it has been discovered that ferroelectricity can be established in (un-)doped hafnium oxide as well. Previous studies showed that both switching mechanisms are influenced by o
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A80415
https://tud.qucosa.de/api/qucosa%3A80415/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A80415/attachment/ATT-0/
Autor:
Hoffmann, Michael, Khan, Asif Islam, Serrao, Claudy, Lu, Zhongyuan, Salahuddin, Sayeef, Pešić, Milan, Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas
Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr₀.₂Ti₀.₈)O₃ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A80423
https://tud.qucosa.de/api/qucosa%3A80423/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A80423/attachment/ATT-0/
Autor:
Hoffmann, Michael, Khan, Asif Islam, Serrao, Claudy, Lu, Zhongyuan, Salahuddin, Sayeef, Pešić, Milan, Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas
Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a ser
Externí odkaz:
http://arxiv.org/abs/1711.07070
Autor:
Pešić, Milan, Künneth, Christopher, Hoffmann, Michael, Mulaosmanovic, Halid, Müller, Stefan, Breyer, Evelyn T., Schroeder, Uwe, Kersch, Alfred, Mikolajick, Thomas, Slesazeck, Stefan
The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technology and ferroelectric memories. However, before hitting the markets, t
Externí odkaz:
http://arxiv.org/abs/1709.06983
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Pešić Milan P.
Publikováno v:
Nuclear Technology and Radiation Protection, Vol 33, Iss 1, Pp 1-23 (2018)
German Nazi state conducted researches in nuclear technologies as an attempt to achieve various military goals. As the result of these researches, German scientists developed different, advanced nuclear technologies in years before and during Worl
Externí odkaz:
https://doaj.org/article/27cd573ea9c444498386596d3229c5c3
Autor:
Pešić, Milan, Knebel, Steve, Cho, Kyuho, Jung, Changhwa, Chang, Jaewan, Lim, Hanjin, Kolomiiets, Nadiia, Afanas’ev, Valeri V., Mikolajick, Thomas, Schroeder, Uwe
Publikováno v:
In Solid State Electronics January 2016 115 Part B:133-139