Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Paz de Araujo CarlosA."'
Autor:
Moriwaki Nobuyuki, Scott MichaflC., Nakane George, Azuma Masamichi, Paz de Araujo CarlosA., Nakakuma Tetsuji, Cuchiaro JosephD., Kano Gota, McMillan LarryD., Hayashi Shinichiro, Tatsuo Otsuki, Nagano Yoshihisa, Sumi Tatsumi, Uemoto Yasuhiro, Yuji Judai
Publikováno v:
Integrated Ferroelectrics. 6:1-13
A 3V 100ns read/write 256kb ferroelectric nonvolatile memory (FeRAM) is achieved with 1T/1C cells, novel reference cell circuits and cell plate circuits. The FeRAM is fabricated in 1.2um CMOS process with single Aluminum interconnection and Bi based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac99d53f765115d375cc4e2c1c21cf44
https://doi.org/10.1080/10584589508019349
https://doi.org/10.1080/10584589508019349
Autor:
James F. Scott, Beall JamesA., Price JohnC., Galt David, Ono RonaldH., Paz de Araujo CarlosA., Larry D. McMillan
Publikováno v:
Integrated Ferroelectrics. 6:189-203
The use of high-dielectric films for microwave devices, especially phased-array radar systems, in the tens of GHz regime requires very low-loss (0.01 to 0.1) films. Unfortunately most ferroelectrics have losses that diverge (greater than unity) in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c065931921f45a1487f3ec3b003d319e
https://doi.org/10.1080/10584589508019364
https://doi.org/10.1080/10584589508019364
Autor:
Solayappan, Narayan, Derbenwick, GaryF., Mcmillan, LarryD., Paz De Araujo, CarlosA., Hayashi, Shinichiro
Publikováno v:
Integrated Ferroelectrics; January 1997, Vol. 14 Issue: 1-4 p237-246, 10p