Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Pawitter Mangat"'
Autor:
Markus P. Benk, Ken Goldberg, Obert Wood, Jeremy McCord, Bryan S. Kasprowicz, Henry Kamberian, Pawitter Mangat, Wallow Thomas I, Yulu Chen
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017.
This paper provides experimental measurements of through-focus pattern shifts between contact holes in a dense array and a surrounding pattern of lines and spaces using the SHARP actinic microscope in Berkeley. Experimental values for pattern shift i
Publikováno v:
SPIE Proceedings.
The prospect of EUVL (Extreme Ultraviolet Lithography) insertion into HVM (High Volume Manufacturing) has never been this promising. As technology is prepared for "lab to fab" transition, it becomes important to comprehend challenges associated with
Autor:
Shravan Matham, Daniel Corliss, Jed H. Rankin, Erik Verduijn, Pawitter Mangat, Nelson Felix, Dirk Hellweg, Obert Wood, Renzo Capelli, Sascha Perlitz, Yulu Chen, Francis Goodwin, Ravi K. Bonam
Publikováno v:
SPIE Proceedings.
We report on the printability, mitigation and actinic mask level review of programmed substrate blank pit and bump defects in a EUV lithography test mask. We show the wafer printing behavior of these defects exposed with an NXE:3300 EUV lithography s
Autor:
Markus P. Benk, Kenneth A. Goldberg, Obert Wood, Pawitter Mangat, Erik Verduijn, Antoine Wojdyla, Bruce W. Smith, Zachary Levinson
Publikováno v:
Levinson, Z; Verduijn, E; Wood, OR; Mangat, P; Goldberg, KA; Benk, MP; et al.(2016). Measurement of euv lithography pupil amplitude and phase variation via image-based methodology. Journal of Micro/ Nanolithography, MEMS, and MOEMS, 15(2). doi: 10.1117/1.JMM.15.2.023508. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/8qr2d001
Journal of Micro/ Nanolithography, MEMS, and MOEMS, vol 15, iss 2
Journal of Micro/Nanopatterning Materials and Metrology, vol 15, iss 2
Journal of Micro/ Nanolithography, MEMS, and MOEMS, vol 15, iss 2
Journal of Micro/Nanopatterning Materials and Metrology, vol 15, iss 2
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE). An approach to image-based EUV aberration metrology using binary mask targets and iterative model-based solutions to extract both the amplitude and phase components of the aberrated p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::357de8cdede9beeeb4891c8a01137ab8
http://www.escholarship.org/uc/item/8qr2d001
http://www.escholarship.org/uc/item/8qr2d001
Autor:
Erik Verduijn, Zac Levinson, Markus P. Benk, Bruce W. Smith, Antoine Wojdyla, Andrew Burbine, Pawitter Mangat, Kenneth A. Goldberg, Obert Wood
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
We present an approach to image-based pupil plane amplitude and phase characterization using models built with principal component analysis (PCA). PCA is a statistical technique to identify the directions of highest variation (principal components) i
Autor:
Vu Luong, Obert Wood, Julia Meyer-Ilse, Mohammad Faheem, Patrick A. Kearney, Keith Kwong Hon Wong, Bianzhu Fu, Valentin Parks, Corbin Bennett, Paul van Der Heide, Wayne Zhao, Pawitter Mangat, Michael Gribelyuk, Vicky Philipsen, Esther P.Y. Chen, Yifan Liang, Ajay Kumar
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Extreme ultraviolet (EUV) lithography with reflective photomasks continues to be a potential patterning technology for high volume manufacturing at the 7 nm technology node and beyond. EUV photomasks with alternative materials to the commonly used Mo
Publikováno v:
SPIE Proceedings.
Improving our collective understanding of extreme ultraviolet (EUV) photomask defects and the imaging properties of available defect imaging tools is essential for improving EUV mask defectivity, defect repair and mitigation, and for high-level strat
Autor:
Obert Wood, Zac Levinson, Eric Hendrickx, Ken Goldberg, Erik Verduijn, Bruce W. Smith, Vicky Philipsen, Antoine Wojdyla, Markus P. Benk, Sudharshanan Raghunathan, Pawitter Mangat
Publikováno v:
Levinson, Zac; Raghunathan, Sudhar; Verduijn, Erik; Wood, Obert; Mangat, Pawutter; Goldberg, Kenneth; et al.(2015). A Method of Image-Based Aberration Metrology for EUVL Tools:. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/15x4s096
We present an approach to image-based EUV aberration metrology using binary mask targets and iterative model-based solutions to extract both the amplitude and phase components of the aberrated pupil function. The approach is enabled through previousl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a9f5cc43f85f956894e01ecfd03e7f2
http://www.escholarship.org/uc/item/15x4s096
http://www.escholarship.org/uc/item/15x4s096
Autor:
Suraj K. Patil, Obert Wood, Erik Verduijn, Vicky Philipsen, Sudharshanan Raghunathan, Pawitter Mangat, Vu Luong, Patrick A. Kearney, Christian Laubis, Frank Scholze, Aditya Kumar, Victor Soltwisch
Publikováno v:
SPIE Proceedings.
In this paper we compare the imaging performance of several options currently under consideration for use in 0.33 and higher numerical aperture (NA) extreme ultraviolet (EUV) mask stacks, Mo/Si ML reflective coatings with 40 bilayers, Ru/Si multilaye
Autor:
Victor Soltwisch, Sudhar Raghunathan, Natalia Davydova, Frank Scholze, Erik Verduijn, Vicky Philipsen, Obert Wood, Eric Hendrickx, Pawitter Mangat
Publikováno v:
SPIE Proceedings.
This paper reports on the experimental validation of adapting the multilayer periodicity of an EUV mask to mitigate pattern shifts at wafer level. This EUV specific pattern shift will eventually contribute to overlay budgets which continue to tighten