Zobrazeno 1 - 10
of 124
pro vyhledávání: '"Pawel Kaminski"'
Autor:
Marek Suproniuk, Karol Piwowarski, Bogdan Perka, Pawel Kaminski, Roman Kozlowski, Marian Teodorczyk
Publikováno v:
Elektronika ir Elektrotechnika, Vol 25, Iss 4, Pp 36-39 (2019)
This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the
Externí odkaz:
https://doaj.org/article/f2fc2207c2de482c840aa1a53db4791f
Autor:
Pawel Kaminski
Publikováno v:
Political Studies Review. 21:321-339
This article studies contacts between interest groups and political parties. Existing research suggests that times of close and formal cooperation between parties and groups in Western Europe are over as the contacts have become more pragmatic and so
Autor:
Dariusz Czolak, Pawel Kaminski, Jaroslaw Gaca, Michal Kozubal, Krystyna Przyborowska, Paweł Piotr Michałowski, A. Dobrowolski, Maciej J. Szary, Tymoteusz Ciuk, Marek Wojcik, Wawrzyniec Kaszub, Adrianna Chamryga, Beata Stanczyk, Roman Kozlowski, J. Jagiełło, Kinga Kosciewicz
Publikováno v:
Current Applied Physics. 27:17-24
In this report we investigate structural and electrical properties of epitaxial Chemical Vapor Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer grown on a conducting 4H–SiC substrate 4° off-axis from the basa
Autor:
Paweł Piotr Michałowski, Tymoteusz Ciuk, Pawel Kaminski, Anna Harmasz, Janusz Płocharski, Rafał Budzich, Roman Kozlowski, Jaroslaw Gaca
Publikováno v:
Journal of Materials Chemistry C. 9:4393-4404
State-of-the-art secondary ion mass spectrometry (SIMS), X-ray reflectivity (XRR) and atomic force microscopy (AFM) have been used to determine the effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric
Autor:
Paweł Kamiński, Andrzej Turos, Roman Kozłowski, Kamila Stefańska-Skrobas, Jarosław Żelazko, Ewa Grzanka
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract The properties and concentrations of deep-level defects induced by implantations of Si and Mg ions into unintentionally doped (UID) epitaxial GaN have been revealed by using the Laplace-transform photoinduced transient spectroscopy (LPITS) a
Externí odkaz:
https://doaj.org/article/73a7eef77260460393b77239bacc4ceb
Autor:
Pawel Kaminski
Publikováno v:
Exploring Organized Interests in Post-Communist Policy-Making ISBN: 9781003049562
Exploring Organized Interests in Post-Communist Policy-Making
National Information Processing Institute
Exploring Organized Interests in Post-Communist Policy-Making
National Information Processing Institute
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4deae5ab48156713af2cb32bbb5a8a33
https://doi.org/10.4324/9781003049562-18
https://doi.org/10.4324/9781003049562-18
Autor:
Karol Piwowarski, M. Suproniuk, Pawel Kaminski, Bogdan Perka, Marian Teodorczyk, Roman Kozlowski
Publikováno v:
Elektronika ir Elektrotechnika, Vol 25, Iss 4, Pp 36-39 (2019)
This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the
High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC
Autor:
Dariusz Czolak, A. Dobrowolski, Michal Kozubal, Wawrzyniec Kaszub, Pawel Kaminski, Beata Stanczyk, J. Jagiełło, Tymoteusz Ciuk, Roman Kozlowski, Krystyna Przyborowska
Publikováno v:
IEEE Transactions on Electron Devices
In this report, we demonstrate a novel high-temperature Hall effect sensor that is based on quasi-free-standing monolayer graphene epitaxially grown on high-purity semiinsulating (SI) on-axis 4H-SiC(0001) substrate in a chemical vapor deposition proc
Publikováno v:
Energies, Vol 17, Iss 13, p 3297 (2024)
In an overwhelming number of cases, the closure of a coal mine in Poland, for safety reasons, requires the installation of a pumping station and systems for the drainage of inflowing water due to its connection via roadways, goaves, or water-leaking
Externí odkaz:
https://doaj.org/article/5914050462ae471bada1c14ccde943ed
Autor:
Marian Teodorczyk, Marek Suproniuk, Pawel Kaminski, Karol Piwowarski, Roman Kozlowski, Bogdan Perka
Publikováno v:
Radioelectronic Systems Conference 2019.